| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,250 pcs
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3250 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,800 pcs
|
1800 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The ON Semiconductor MJD32CG is a PNP power transistor designed for general purpose amplifier and low-speed switching applications. It is packaged in a DPAK (TO-252-3) surface mount package, making it suitable for space-constrained designs.
Key electrical characteristics include a collector-emitter voltage (VCEO) of 100V and a continuous collector current (IC) of 3A. The transistor offers a DC current gain (hFE) of 10 at 3A and 4V, with a Vce saturation of 1.2V maximum at 375mA base current and 3A collector current. Its operating frequency reaches up to 3MHz.
The device operates within a junction temperature range of -65°C to 150°C. It is designed for surface mounting, with a thermal resistance junction-to-case of 8.3°C/W and junction-to-ambient of 80°C/W. The epoxy meets UL 94, V-0 standards.
This transistor is Pb-free and RoHS compliant. It is electrically similar to the popular TIP31 and TIP32 series.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the MJD32CG is 100 Vdc.
The MJD32CG has a continuous collector current rating of 3 A.
The operating and storage junction temperature range for the MJD32CG is -65°C to 150°C.
Yes, the MJD32CG is RoHS3 compliant.