| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,356 pcs
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2356 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MJD32C from STMicroelectronics is a low voltage PNP power transistor manufactured using planar technology with a base island layout. This design results in high gain performance and very low saturation voltage.
Key electrical ratings include a collector-emitter voltage (VCEO) of -100V and a continuous collector current (IC) of -3A, with a peak collector current (ICM) of -5A. The device can dissipate up to 15W at 25°C case temperature. Its operating junction temperature range is -65°C to 150°C.
This transistor is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface-mount package, making it suitable for automated assembly processes. It is complementary to the NPN type MJD31C.
Applications include general purpose linear and switching equipment where a robust PNP transistor is required. The DPAK package offers efficient heat dissipation for its size.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the MJD32C is -100V.
The MJD32C transistor has a continuous collector current (IC) of -3A.
The MJD32C has a total power dissipation (PTOT) of 15W at 25°C.
The maximum operating junction temperature (TJ) for the MJD32C is 150°C.
The MJD32C is available in a TO-252-3, DPak (2 Leads + Tab), SC-63 package.
The MJD32C is a surface mount device.