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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,575 pcs
|
4575 pcs | On Request | 1 | On Request | On Request | N/A | On Request | On Request | |
|
2,067 pcs
|
2067 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base Current | |
| Collector Current - Continuous | |
| Collector Current - Peak | |
| Collector-Base Voltage | |
| Collector-Emitter Voltage | |
| Current | |
| Current Collector Cutoff (Maximum @ VCE = 40 Vdc, IB = 0) | |
| Current Collector Cutoff (Maximum @ VCE = 60 Vdc, IB = 0) | |
| Current Collector Cutoff (Maximum @ VCE = Rated VCEO, VEB = 0) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter Cutoff Current | |
| Emitter-Base Voltage | |
| Frequency | |
| Frequency - Transition | |
| Gain DC Hfe (Minimum @ IC = 1 Adc, VCE = 4 Vdc) | |
| Lead Temperature for Soldering Purposes | |
| Mounting Type | |
| Operating Temperature | |
| Operating and Storage Junction Temperature Range | |
| Power | |
| Power Dissipation Total (Maximum @ TA=25 °C) | |
| Power Dissipation Total (Maximum @ Tc = 25 °C) | |
| Supplier Device Package | |
| Thermal Resistance - Junction to Case | |
| Thermal Resistance Junction-to-Ambient | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The MJD31T4G from On Semiconductor is an NPN bipolar junction transistor (BJT) suitable for general purpose amplifier and low-speed switching applications. It is designed for surface mount applications and comes in a DPAK package.
Key electrical specifications include a maximum collector-emitter voltage of 40V and a continuous collector current of 3A. The device offers a maximum power dissipation of 1.56W at 25°C ambient temperature. It has a DC current gain (hFE) of at least 10 at 3A and 4V, and a Vce saturation of 1.2V maximum at 375mA collector current and 3A collector current.
The operating temperature range for the MJD31T4G is -65°C to +150°C (TJ). Thermal characteristics include a junction-to-case thermal resistance of 8.3°C/W and a junction-to-ambient thermal resistance of 80°C/W.
This transistor is packaged in a TO-252-3, DPak (2 Leads + Tab), SC-63 surface mount package, making it suitable for automated assembly processes. It is RoHS3 compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 40 Vdc.
The continuous collector current is 3 Adc.
The maximum power dissipation at 25°C ambient is 1.56 W.
The operating and storage junction temperature range is -65°C to +150°C.
The MJD31T4G is supplied in a TO-252-3, DPak (2 Leads + Tab), SC-63 package.
The MJD31T4G is a surface mount device.