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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
28,000 pcs
|
28000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
15,033 pcs
|
15033 pcs | On Request | 1 | On Request | On Request | 1406+ | On Request | On Request | |
|
3,147 pcs
|
3147 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,490 pcs
|
1490 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,035 pcs
|
1035 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
30 pcs
|
30 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base Current | |
| Collector Current - Peak | |
| Collector-Base Voltage | |
| Current | |
| Current Collector Cutoff (Maximum @ VCE = 40 Vdc, IB = 0) | |
| Current Collector Cutoff (Maximum @ VCE = 60 Vdc, IB = 0) | |
| Current Collector Cutoff (Maximum @ VCE = Rated VCEO, VEB = 0) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter Cutoff Current | |
| Emitter-Base Voltage | |
| Frequency | |
| Halogen Free | |
| Lead Temperature for Soldering Purposes | |
| Mounting Type | |
| Operating Temperature | |
| Pb-Free | |
| Power | |
| Power Dissipation Total (Maximum @ Tc = 25 °C) | |
| Supplier Device Package | |
| Thermal Resistance - Junction to Case | |
| Thermal Resistance Junction-to-Ambient | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| Voltage Collector Emitter Sustaining (Minimum @ IC = 30 mAdc, IB = 0) |
The MJD31CT4G from ON Semiconductor is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and low-speed switching applications. This device offers a maximum collector-emitter voltage (VCEO) of 100V and a continuous collector current (IC) of 3A.
Key electrical characteristics include a maximum power dissipation of 1.56W at 25°C ambient temperature and a DC current gain (hFE) of at least 10 at 3A collector current and 4V VCE. The transistor operates within a junction temperature range of -65°C to 150°C.
Packaged in a TO-252-3, DPak (2 Leads + Tab), SC-63 surface-mount package, the MJD31CT4G is suitable for applications requiring compact board layouts. It is also Pb-free and RoHS compliant, meeting environmental standards for modern electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the MJD31CT4G is 100 Vdc.
The continuous collector current (IC) for the MJD31CT4G is 3 Adc.
The maximum power dissipation (PD) for the MJD31CT4G at 25°C ambient is 1.56 W.
The operating and storage junction temperature range for the MJD31CT4G is -65°C to 150°C.
The MJD31CT4G is supplied in a TO-252-3, DPak (2 Leads + Tab), SC-63 surface mount package.
Yes, the MJD31CT4G is RoHS3 compliant.