| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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16,020 pcs
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16020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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6,413 pcs
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6413 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The STMicroelectronics MJD31CT4-A is an NPN bipolar transistor suitable for various power switching and amplification tasks. It offers a maximum collector-emitter voltage (VCEO) of 100V and a continuous collector current (IC) of up to 3A.
This transistor is housed in a TO-252 surface-mount package, making it suitable for applications where space is a consideration. It operates within a temperature range of -65°C to +150°C. The device exhibits a DC current gain (hFE) of at least 25 at 1A and 4V, and a minimum of 10 at 3A and 4V. Its maximum power dissipation is rated at 15000mW.
With its robust specifications, the MJD31CT4-A is a reliable component for power supply circuits, motor control, and general-purpose amplification where moderate power handling is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.25 | $1.25 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the MJD31CT4-A is 100V.
The maximum continuous collector current (IC) for the MJD31CT4-A is 3A.
The MJD31CT4-A is supplied in a TO-252 package.
The operating temperature range for this transistor is -65°C to +150°C.
The minimum DC current gain (hFE) at 1A and 4V is 25.
The factory pack quantity is 2500 units.