| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,700 pcs
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2700 pcs | On Request | 1 | On Request | On Request | 1514+ | On Request | On Request | |
| On Request | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Halogen Free | |
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| Vce Saturation (Max) @ Ib, Ic | |
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The ON Semiconductor MJD31CRLG is a silicon NPN power transistor designed for general purpose amplifier and low-speed switching applications. It offers a collector-emitter voltage of 100V and a continuous collector current of 3A.
Key electrical characteristics include a maximum collector-emitter saturation voltage of 1.2V at 375mA collector current and a minimum DC current gain (hFE) of 25 at 1A collector current. The gain bandwidth product is 3MHz.
This transistor is housed in a TO-252-3, DPak surface-mount package, making it suitable for space-constrained applications. It operates within a temperature range of -65°C to 150°C.
The MJD31CRLG is Pb-free and RoHS compliant, with a moisture sensitivity level of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage for the MJD31CRLG is 100 Vdc.
The MJD31CRLG has a continuous collector current rating of 3 Adc.
The operating temperature range for the MJD31CRLG is -65°C to 150°C.
The MJD31CRLG is supplied in a TO-252-3, DPak package.
Yes, the MJD31CRLG is RoHS3 compliant.