MJD31CG The MJD31CG is an NPN bipolar junction transistor rated for 100V and 3A, designed in a DPAK package for surface mounting applications.
Mfr Part #:

MJD31CG

Available from 5 distributors
Mfr Name: On Semiconductor
On Semiconductor
The MJD31CG is an NPN bipolar junction transistor rated for 100V and 3A, designed in a DPAK package for surface mounting applications.
Total Stock: 17,334 pcs
$ Price Range: $0.99

MJD31CG Available from 5 distributors

Authorised
Non-Authorised

MJD31CG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base Current
Collector Current - Continuous
Collector Current - Peak
Collector Cutoff Current (Maximum @ VCE = 60 Vdc, IB = 0)
Collector Cutoff Current (Maximum @ VCE = Rated VCEO, VEB = 0)
Collector-Base Voltage
Collector-Emitter Sustaining Voltage
Collector-Emitter Voltage
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Voltage
Frequency
Lead Temperature for Soldering Purposes
Mounting Type
Operating Temperature
Operating and Storage Junction Temperature Range
Power
Supplier Device Package
Thermal Resistance - Junction to Case
Thermal Resistance Junction-to-Ambient
Total Power Dissipation (Maximum @ Tc=25 °C)
Total power dissipation (Maximum @ Ta=25 °C)
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

MJD31CG Description

Short technical summary and product information.

The MJD31CG is a bipolar junction transistor (BJT) manufactured by On Semiconductor. It features a maximum collector-emitter voltage of 100V and a collector current of 3A, suitable for switching and amplification in electronic circuits. The device is packaged in a DPAK surface-mount package, enabling compact and efficient mounting on printed circuit boards. Its electrical characteristics include a maximum emitter-base voltage of 5V and a total power dissipation of 15W at 25°C junction temperature. The transistor operates within a junction temperature range of -65°C to 150°C and has thermal resistances of 8.3°C/W junction-to-case and 80°C/W junction-to-ambient. It is designed for applications requiring high voltage and current handling, such as power switching, motor control, and audio amplification.

MJD31CG Quick Information

Product Type: Bipolar Junction Transistor
Canonical Name: MJD31CG

MJD31CG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MJD31CG Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MJD31CG Features

  • Maximum collector-emitter voltage of 100V
  • Maximum collector current of 3A
  • DPAK surface-mount package
  • Maximum emitter-base voltage of 5V
  • Total power dissipation of 15W at 25°C

MJD31CG Applications

  • Used in power switching circuits
  • Suitable for motor control applications
  • Ideal for audio amplification
  • Surface-mount design for compact assemblies

MJD31CG FAQs

4 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the MJD31CG?

The maximum collector-emitter voltage of the MJD31CG is 100V.

What is the collector current rating for the MJD31CG?

The collector current is rated at 3A maximum for the MJD31CG.

What package type does the MJD31CG use?

The MJD31CG is packaged in a DPAK surface-mount package.

What is the maximum operating junction temperature for the MJD31CG?

The operating junction temperature range is from -65°C to 150°C.

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