MJD2955T4G The MJD2955T4G is a PNP power transistor from ON Semiconductor. It offers a 60V collector-emitter voltage and 10A collector current, housed in a DPAK surface mount package.
Mfr Part #:

MJD2955T4G

Available from 5 distributors
Mfr Name: On Semiconductor
On Semiconductor
The MJD2955T4G is a PNP power transistor from ON Semiconductor. It offers a 60V collector-emitter voltage and 10A collector current, housed in a DPAK surface mount package.
✓ Total Stock: 14,566 pcs
$ Price Range: $0.28

MJD2955T4G Available from 5 distributors

✓ Authorised
✓ Non-Authorised

MJD2955T4G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

MJD2955T4G Description

Short technical summary and product information.

The MJD2955T4G is a PNP bipolar junction transistor (BJT) designed for general purpose amplifier and low-speed switching applications. Manufactured by ON Semiconductor, this device features a maximum collector-emitter voltage of 60V and a continuous collector current rating of 10A.

 

Key electrical characteristics include a high current gain-bandwidth product and a Vce Saturation of 8V at 3.3A, 10A. The transistor is specified for operation within a temperature range of -55°C to 150°C.

 

Packaged in a TO-252-3, DPak (2 Leads + Tab), SC-63 surface mount package, the MJD2955T4G is suitable for applications requiring compact board space. Its lead-formed design is optimized for surface mount assembly.

 

This device is Pb-Free and RoHS compliant, making it suitable for modern electronic designs. It is electrically similar to the MJE2955 and MJE3055 series transistors.

MJD2955T4G Quick Information

Product Type: PNP Power Transistor
Series: MJD2955T4G
Canonical Name: MJD2955T4G PNP Power Transistor
Subcategory: Bipolar (BJT) - Single

MJD2955T4G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb−Free

MJD2955T4G Estimated Pricing

Qty Low High
1+ $0.28 $0.28

Estimated market price range - modelled values for guidance only, not live distributor offers.

MJD2955T4G Features

  • PNP bipolar junction transistor.
  • 60V collector-emitter voltage rating.
  • 10A continuous collector current.
  • DPAK surface mount package.
  • RoHS3 compliant and Pb-Free.

MJD2955T4G Applications

  • General purpose amplifier circuits.
  • Low speed switching applications.
  • Power supply regulation stages.
  • Audio amplifier output stages.

MJD2955T4G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MJD2955T4G?

The maximum collector-emitter voltage is 60 Vdc.

What is the continuous collector current rating?

The continuous collector current rating is 10 Adc.

What is the operating temperature range?

The operating temperature range is -55°C to +150°C.

What package type is the MJD2955T4G supplied in?

It is supplied in a TO-252-3, DPak (2 Leads + Tab), SC-63 package.

Is the MJD2955T4G RoHS compliant?

Yes, the MJD2955T4G is RoHS3 Compliant.

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