MJD2955G The ON Semiconductor MJD2955G is a PNP bipolar junction transistor designed for general purpose amplifier and low speed switching applications. It features a 60V collector-emitter voltage and 10A collector current.
Mfr Part #:

MJD2955G

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor MJD2955G is a PNP bipolar junction transistor designed for general purpose amplifier and low speed switching applications. It features a 60V collector-emitter voltage and 10A collector current.
Total Stock: 1,973 pcs
$ Price Range: $0.99

MJD2955G Available from 3 distributors

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,590 pcs
1590 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
248 pcs
248 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
135 pcs
135 pcs On Request 1 On Request On Request On Request On Request On Request

MJD2955G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector Cutoff Current
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Gain-Bandwidth Product
Mounting Type
Operating Temperature
Power
Power Dissipation (Maximum @ TC=25 °C)
Power Dissipation (Maximum) @ TA=25°C
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

MJD2955G Description

Short technical summary and product information.

The ON Semiconductor MJD2955G is a PNP power transistor designed for general purpose amplifier and low speed switching applications. It offers a maximum collector-emitter voltage of 60V and a continuous collector current of 10A.

 

This transistor has a maximum power dissipation of 20W at 25°C case temperature and a gain-bandwidth product of 2MHz. The operating temperature range is from -55°C to +150°C.

 

The MJD2955G is supplied in a TO-252-3, DPak (2 Leads + Tab), SC-63 surface mount package. It is suitable for applications requiring a robust PNP transistor in a compact form factor.

MJD2955G Quick Information

Product Type: PNP Power Transistor
Canonical Name: MJD2955G PNP Power Transistor
Subcategory: PNP

MJD2955G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb−Free

MJD2955G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MJD2955G Features

  • PNP bipolar junction transistor
  • 60V collector-emitter voltage rating
  • 10A continuous collector current
  • 20W maximum power dissipation
  • Surface mount DPAK package

MJD2955G Applications

  • General purpose amplifier circuits
  • Low speed switching applications
  • Power supply regulation
  • Motor control circuits

MJD2955G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MJD2955G?

The maximum collector-emitter voltage is 60 Vdc.

What is the continuous collector current rating?

The continuous collector current is 10 A.

What is the maximum power dissipation?

The maximum power dissipation is 20 W at 25°C case temperature.

What is the operating temperature range?

The operating temperature range is -55°C to +150°C.

What package type is the MJD2955G supplied in?

The MJD2955G is supplied in a TO-252-3, DPak (2 Leads + Tab), SC-63 surface mount package.

Is the MJD2955G RoHS compliant?

Yes, the MJD2955G is RoHS3 compliant.

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