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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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28,068 pcs
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28068 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request | |
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5,576 pcs
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5576 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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3,520 pcs
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3520 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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2,264 pcs
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2264 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,700 pcs
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1700 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base Current | |
| Collector - Emitter Saturation Voltage | |
| Collector Current - Peak | |
| Collector Cutoff Current (Maximum @ VCB = 100 Vdc, IE = 0) | |
| Collector Cutoff Current (Maximum @ VCB = 100 Vdc, IE = 0, TJ = 125 °C) | |
| Collector-Base Voltage | |
| Collector-Emitter Sustaining Voltage | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter Cutoff Current | |
| Emitter-Base Voltage | |
| Frequency | |
| Halogen Free | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Pb-Free | |
| Power | |
| Power Dissipation (Maximum @ TA = 25 °C, Note 2) | |
| Supplier Device Package | |
| Supplier Package | |
| Thermal Resistance - Junction to Case | |
| Thermal Resistance Junction-to-Ambient | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The ON Semiconductor MJD253T4G is a PNP silicon power transistor designed for applications requiring high DC current gain and low collector-emitter saturation voltage. It is suitable for low voltage, low power audio amplifier applications.
This transistor offers a maximum collector-emitter voltage of 100V and a continuous collector current of 4A. It has a maximum power dissipation of 1.4W at 25°C ambient temperature when surface mounted on minimum pad sizes. The device operates over a temperature range of -65°C to 150°C.
The MJD253T4G comes in a TO-252-3, DPak (2 Leads + Tab), SC-63 surface mount package, making it suitable for automated assembly processes. It features a gain bandwidth product of 40MHz and a DC current gain (hFE) of 40 minimum at 200mA collector current and 1V collector-emitter voltage.
This component is Pb-free and halogen-free, complying with RoHS standards. Its robust construction and specifications make it a reliable choice for various electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the MJD253T4G is 100 Vdc.
The MJD253T4G has a continuous collector current rating of 4 A.
The total device dissipation at 25°C ambient temperature is 1.4 W when surface mounted on minimum pad sizes.
The operating and storage junction temperature range for the MJD253T4G is -65°C to +150°C.
The MJD253T4G is supplied in a TO-252-3, DPak (2 Leads + Tab), SC-63 package.
The minimum DC current gain (hFE) for the MJD253T4G is 40 at 200mA collector current and 1V collector-emitter voltage.
The gain bandwidth product (fT) for the MJD253T4G is 40 MHz.