MJD253-1G The MJD253-1G is a PNP bipolar junction transistor from ON Semiconductor. It offers a 100V collector-emitter voltage and 4A continuous collector current.
Mfr Part #:

MJD253-1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The MJD253-1G is a PNP bipolar junction transistor from ON Semiconductor. It offers a 100V collector-emitter voltage and 4A continuous collector current.
Total Stock: 10,875 pcs
$ Price Range: $0.99

MJD253-1G Available from 1 distributor

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Non-Authorised
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10,875 pcs
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MJD253-1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base Current
Collector Current - Continuous
Collector Current - Peak
Collector-Base Voltage
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter Cutoff Current
Emitter-Base Voltage
Frequency
Halogen Free
ICBO (Maximum @ VCB = 100 Vdc, IE = 0)
ICBO (Maximum @ VCB = 100 Vdc, IE = 0, TJ = 125 °C)
Lead Style
Mounting Type
Operating Temperature
Operating and Storage Junction Temperature Range
PD (Maximum @ TA = 25 °C (Note 2)
PD (Maximum @ Tc=25 °C)
Pb-Free
Power
Supplier Device Package
Thermal Resistance - Junction to Case
Thermal Resistance Junction-to-Ambient
Transistor Type
VCEO (Maximum)
Vce Saturation (Max) @ Ib, Ic
Voltage

MJD253-1G Description

Short technical summary and product information.

The ON Semiconductor MJD253-1G is a PNP bipolar junction transistor designed for low voltage, low power applications. It features a high DC current gain and a low collector-emitter saturation voltage. This transistor is rated for a continuous collector current of 4A and a collector-emitter voltage of 100V.

 

The MJD253-1G is packaged in an I-PAK (TO-251-3 Short Leads) for through-hole mounting. It has a total device dissipation of 1.4W at 25°C ambient temperature and 12.5W at 25°C case temperature. The operating and storage junction temperature range is from -65°C to 150°C.

 

This device is Pb-free and Halogen-free, compliant with RoHS standards. It is suitable for applications requiring high gain audio amplification and other low-voltage power control circuits.

MJD253-1G Quick Information

Product Type: PNP Transistor
Canonical Name: MJD253-1G PNP Power Transistor
Subcategory: Single

MJD253-1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MJD253-1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MJD253-1G Features

  • PNP bipolar junction transistor.
  • 100V collector-emitter voltage rating.
  • 4A continuous collector current.
  • 1.4W power dissipation at 25°C ambient.
  • Through-hole I-PAK package.

MJD253-1G Applications

  • Designed for audio amplifier circuits.
  • Suitable for low-voltage applications.
  • General purpose switching tasks.
  • Power control circuits.

MJD253-1G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage (Vceo) for the MJD253-1G?

The collector-emitter voltage (Vceo) for the MJD253-1G is 100 Vdc.

What is the continuous collector current (Ic) rating of the MJD253-1G?

The continuous collector current (Ic) rating of the MJD253-1G is 4 Adc.

What is the operating temperature range for the MJD253-1G transistor?

The operating temperature range for the MJD253-1G is -65°C to 150°C (TJ).

What package type is the MJD253-1G supplied in?

The MJD253-1G is supplied in an I-PAK package, specifically TO-251-3 Short Leads, IPak, TO-251AA.

Is the MJD253-1G RoHS compliant?

Yes, the MJD253-1G is RoHS3 Compliant.

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