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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,421 pcs
|
3421 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,975 pcs
|
1975 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Halogen Free | |
| Leakage Current (Maximum @ VBE = 7.0 Vdc, IC = 0) | |
| Leakage Current (Maximum @ VCB = 100 Vdc, IE = 0) | |
| Leakage Current (Maximum @ VCB = 100 Vdc, IE = 0, TJ = 125 °C) | |
| Mounting Type | |
| Operating Temperature | |
| Operating and Storage Junction Temperature Range | |
| Pb-Free | |
| Power | |
| Power Dissipation (Maximum @ TC=25 °C) | |
| Power Dissipation (Maximum) @ TA=25°C | |
| Supplier Device Package | |
| Thermal Resistance (Minimum @ Note 2) | |
| Thermal Resistance (Unspecified condition) | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| voltage (Minimum @ IC = 10 mAdc, IB = 0) |
The MJD243T4G from ON Semiconductor is a complementary silicon plastic power transistor designed for surface mount applications. This NPN transistor offers a high DC current gain and a low collector-emitter saturation voltage, making it suitable for low voltage, low power, high-gain audio amplifier applications.
Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of 100V and a continuous collector current (IC) of 4A. It also provides a high current-gain bandwidth product (fT) of 40MHz. The device is rated for a total power dissipation of 1.4W at 25°C ambient temperature, with a junction-to-case thermal resistance of 10°C/W.
The MJD243T4G is housed in a DPAK-3 (TO-252-3) surface mount package, facilitating integration into compact electronic designs. Its operating and storage junction temperature range is from -65°C to +150°C. The transistor is Pb-free and halogen-free, complying with RoHS standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the MJD243T4G is 100V.
The MJD243T4G has a continuous collector current rating of 4A.
The operating and storage junction temperature range for the MJD243T4G is -65°C to +150°C.
The MJD243T4G is supplied in a DPAK-3 (TO-252-3, DPak) surface mount package.
Yes, the MJD243T4G is RoHS3 compliant.