MJD210TF The MJD210TF is a PNP bipolar junction transistor from On Semiconductor. It offers a 25V collector-emitter breakdown voltage and a continuous collector current of 5A.
Mfr Part #:

MJD210TF

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The MJD210TF is a PNP bipolar junction transistor from On Semiconductor. It offers a 25V collector-emitter breakdown voltage and a continuous collector current of 5A.
Total Stock: 3,350 pcs
$ Price Range: $0.99

MJD210TF Available from 1 distributor

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
3,350 pcs
3350 pcs On Request 1 On Request On Request 11+ On Request On Request

MJD210TF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Current - Collector Cutoff
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Frequency - Transition
Lead Style
Mounting Type
Operating Temperature
Power
Power - Max
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

MJD210TF Description

Short technical summary and product information.

The MJD210TF is a PNP bipolar junction transistor (BJT) manufactured by On Semiconductor. This component is designed for various electronic applications requiring robust switching and amplification capabilities. It features a collector-emitter breakdown voltage of 25V and can handle a continuous collector current of up to 5A.

 

Key electrical characteristics include a maximum power dissipation of 1.4W and a transition frequency of 65MHz. The transistor exhibits a minimum DC current gain (hFE) of 45 at 2A collector current and 1V Vce. Its Vce saturation is specified at a maximum of 1.8V when operating at 1A collector current and 1A base current.

 

This device is housed in a surface-mount D-Pak package (TO-252-3, SC-63), making it suitable for integration into compact PCB designs. The operating temperature range extends up to 150°C (TJ), ensuring reliability in demanding thermal environments. The MJD210TF is RoHS3 compliant, indicating adherence to environmental standards for hazardous substances.

MJD210TF Quick Information

Product Type: Bipolar Junction Transistor
Canonical Name: MJD210TF PNP Bipolar Junction Transistor
Subcategory: Single BJT

MJD210TF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MJD210TF Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MJD210TF Features

  • PNP bipolar junction transistor.
  • 25V collector-emitter breakdown voltage.
  • 5A continuous collector current.
  • 1.4W maximum power dissipation.
  • Surface mount D-Pak package.

MJD210TF Applications

  • Suitable for high-current switching applications.
  • Used in power regulation circuits.
  • Ideal for motor control and driver circuits.
  • Applicable in audio amplification systems.

MJD210TF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage for the MJD210TF?

The collector-emitter breakdown voltage for the MJD210TF is 25V.

What is the maximum continuous collector current of the MJD210TF?

The MJD210TF can handle a maximum continuous collector current of 5A.

What is the maximum power dissipation for the MJD210TF transistor?

The MJD210TF has a maximum power dissipation of 1.4W.

What is the transition frequency of the MJD210TF?

The transition frequency for the MJD210TF is 65MHz.

What is the operating temperature range for the MJD210TF?

The MJD210TF operates at temperatures up to 150°C (TJ).

What type of package is the MJD210TF supplied in?

The MJD210TF is supplied in a TO-252-3, DPak (2 Leads + Tab), SC-63 package.

How is the MJD210TF mounted?

The MJD210TF is designed for surface mounting.

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