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MJD210T4G The MJD210T4G is a PNP bipolar junction transistor designed for high-current switching and amplification. It features a maximum collector-emitter voltage of 25V and a collector current of 5A, housed in a surface-mount DPAK package.
Mfr Part #:

MJD210T4G

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
The MJD210T4G is a PNP bipolar junction transistor designed for high-current switching and amplification. It features a maximum collector-emitter voltage of 25V and a collector current of 5A, housed in a surface-mount DPAK package.
✓ Total Stock: 37,241 pcs
$ Price Range: $0.99

MJD210T4G Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Flip Electronics ✓
Non-Authorised Inventory information
36,000 pcs
On Request
36000 pcs On Request 1 On Request On Request On Request On Request On Request
Bristol Electronics ✓
Non-Authorised Inventory information
1,005 pcs
On Request
1005 pcs On Request 1 On Request On Request On Request On Request On Request
ACK ELEKTRONIK ✓
Non-Authorised Inventory information
236 pcs
On Request
236 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

MJD210T4G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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MJD210T4G Description

Short technical summary and product information.

The MJD210T4G is a bipolar junction transistor (BJT) manufactured by On Semiconductor. It is a PNP type designed for high-current switching and amplification applications. The device can operate at a maximum collector-emitter voltage of 25V and supports a continuous collector current of 5A. Its power dissipation at 25°C is up to 12.5W, with a junction-to-case thermal resistance of 10°C/W and junction-to-ambient resistance of 89.3°C/W. The transistor is housed in a surface-mount DPAK package, suitable for automated assembly and compact designs. It operates within a temperature range of -65°C to 150°C and complies with RoHS standards. The device is suitable for use in power regulation, switching, and amplification circuits where high current and voltage handling are required.

MJD210T4G Quick Information

Product Type: Bipolar Junction Transistor
Canonical Name: TRANS PNP 25V 5A DPAK

MJD210T4G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MJD210T4G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MJD210T4G Features

  • Maximum collector-emitter voltage of 25V
  • Supports continuous collector current of 5A
  • Surface-mount DPAK package
  • High current gain minimum of 45
  • Operating temperature range from -65°C to 150°C

MJD210T4G Applications

  • Used in power switching circuits
  • Suitable for high-current amplification
  • Ideal for automotive and industrial power supplies
  • Applicable in motor control applications

MJD210T4G FAQs

4 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the MJD210T4G?

The maximum collector-emitter voltage is 25V.

What package does the MJD210T4G come in?

It comes in a DPAK surface-mount package.

What is the operating temperature range of the MJD210T4G?

-65°C to 150°C.

Is the MJD210T4G RoHS compliant?

Yes, it is RoHS3 compliant.

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