| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,064 pcs
|
3064 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free |
The MJD210T4 is a PNP silicon power transistor manufactured by Motorola Semiconductor, suitable for low voltage and low power audio amplifier applications. This device offers high DC current gain and a low collector-emitter saturation voltage. It is housed in a DPAK surface mount package, designed for efficient heat dissipation with a junction-to-case thermal resistance of 10 °C/W.
Key electrical characteristics include a collector-emitter voltage (VCEO) of 25V and a continuous collector current (IC) of 5.0A. The transistor operates within a junction temperature range of -65 to +150°C. The epoxy used in its construction meets UL 94 V-0 standards. This component is Pb-free and RoHS compliant.
Designed for surface mount applications, the MJD210T4 is ideal for integration into compact electronic circuits where space is a constraint. Its complementary NPN counterpart is the MJD200. The device is rated for a total power dissipation of 12.5W at 25°C case temperature.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 25 Vdc.
It comes in a DPAK surface mount package.
The maximum collector current is 5 Adc.
The junction temperature range is from -65°C to +150°C.
Yes, it is RoHS3 compliant.
Yes, it is Pb-Free.