MJD210RLG The MJD210RLG is a PNP bipolar junction transistor from ON Semiconductor. It is designed for low voltage, low power, high gain audio amplifier applications.
Mfr Part #:

MJD210RLG

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The MJD210RLG is a PNP bipolar junction transistor from ON Semiconductor. It is designed for low voltage, low power, high gain audio amplifier applications.
✓ Total Stock: 645 pcs
$ Price Range: $0.99

MJD210RLG Available from 1 distributor

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✓ Non-Authorised
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645 pcs
645 pcs On Request 1 On Request On Request On Request On Request On Request

MJD210RLG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

MJD210RLG Description

Short technical summary and product information.

The MJD210RLG is a PNP silicon power transistor manufactured by ON Semiconductor. It is designed for low voltage, low power, and high gain audio amplifier applications. This device features a high DC current gain, low collector-emitter saturation voltage, and a high current-gain bandwidth product.

 

The transistor is housed in a DPAK (TO-252-3) surface-mount package, making it suitable for space-constrained applications. It has a continuous collector current rating of 5A and a collector-emitter voltage rating of 25V. The operating temperature range is from -65°C to 150°C.

 

Key electrical characteristics include a minimum DC current gain of 45 at 2A and 1V, and a maximum Vce saturation of 1.8V at 1A and 5A. The frequency bandwidth product is 65MHz.

 

This component is Pb-free and RoHS compliant, aligning with environmental standards for electronic manufacturing.

MJD210RLG Quick Information

Product Type: PNP Transistor
Canonical Name: MJD210RLG PNP Power Transistor
Subcategory: Single

MJD210RLG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MJD210RLG Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MJD210RLG Features

  • PNP silicon power transistor
  • Designed for audio amplifier applications
  • High DC current gain
  • Low collector-emitter saturation voltage
  • DPAK surface mount package

MJD210RLG Applications

  • Used in power switching circuits
  • Suitable for amplification applications
  • Ideal for industrial control systems
  • Applicable in compact electronic modules

MJD210RLG FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MJD210RLG?

The maximum collector-emitter voltage is 25 Vdc.

What is the continuous collector current rating?

The continuous collector current rating is 5 A.

What is the operating temperature range?

The operating temperature range is -65°C to 150°C.

What is the minimum DC current gain (hFE) at 2A and 1V?

The minimum DC current gain (hFE) at 2A and 1V is 45.

What is the package type for the MJD210RLG?

The package type is DPAK (TO-252-3, DPak (2 Leads + Tab), SC-63).

Is the MJD210RLG RoHS compliant?

Yes, the MJD210RLG is RoHS3 compliant.

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