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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,365 pcs
|
3365 pcs | On Request | 1 | On Request | On Request | 1423+ | On Request | On Request | |
|
1,226 pcs
|
1226 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
190 pcs
|
190 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base Current | |
| Collector Current - Peak | |
| Collector Cutoff Current | |
| Collector-Base Voltage | |
| Collector-Emitter Sustaining Voltage | |
| Current | |
| Current Gain (Minimum @ IC = 500 mAdc, VCE = 1 Vdc) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter Cutoff Current | |
| Emitter-Base Voltage | |
| Frequency | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Power Dissipation (Maximum @ TC=25 °C) | |
| Power Dissipation (Maximum) @ TA=25°C | |
| Supplier Device Package | |
| Tape & Reel | |
| Thermal Resistance - Junction to Case | |
| Thermal Resistance Junction-to-Ambient | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The MJD200T4G is a complementary NPN silicon power transistor manufactured by On Semiconductor. It is designed for low voltage, low power, and high-gain audio amplifier applications. This device offers a collector-emitter voltage of 25V and a continuous collector current of 5A.
Key electrical characteristics include a high DC current gain (hFE) of 45 minimum at 2A, 1V, and a low collector-emitter saturation voltage (VCE(sat)) of 1.8V maximum at 1A, 5A. The transistor has a transition frequency (fT) of 65MHz.
Packaged in a surface-mount DPAK (TO-252-3) case, the MJD200T4G is suitable for applications requiring compact board space. It operates within a junction temperature range of -65°C to 150°C. The device also meets Pb-free and RoHS compliance standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) for the MJD200T4G is 25 Vdc.
The continuous collector current (IC) for the MJD200T4G is 5 A.
The maximum power dissipation (PD) at TC = 25°C is 12.5 W.
The operating and storage junction temperature range is -65°C to 150°C.
The minimum DC current gain (hFE) at IC = 2A, VCE = 1V is 45.
The MJD200T4G is supplied in a DPAK surface mount package.