MJD200G The On Semiconductor MJD200G is an NPN bipolar junction transistor designed for low voltage, low power applications. It features a 25V collector-emitter voltage and 5A continuous collector current.
Mfr Part #:

MJD200G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor MJD200G is an NPN bipolar junction transistor designed for low voltage, low power applications. It features a 25V collector-emitter voltage and 5A continuous collector current.
Total Stock: 4,232 pcs
$ Price Range: $0.99

MJD200G Available from 1 distributor

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
4,232 pcs
4232 pcs On Request 1 On Request On Request 1536+ On Request On Request

MJD200G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Power Dissipation (Maximum @ TC=25 °C)
Power Dissipation (Maximum) @ TA=25°C
Supplier Device Package
Thermal Resistance (Maximum)
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

MJD200G Description

Short technical summary and product information.

The MJD200G from On Semiconductor is a silicon NPN power transistor designed for surface mount applications. It is suitable for low voltage, low power, and high gain audio amplifier applications.

 

Key electrical specifications include a maximum collector-emitter voltage of 25V and a continuous collector current of 5A. The transistor offers a high DC current gain (hFE) of 45 minimum at 2A collector current and 1V Vce. Its saturation voltage (Vce(sat)) is a maximum of 1.8V at 1A collector current and 5A collector current.

 

This device has a power dissipation rating of 1.4W at 25°C ambient temperature and 12.5W at 25°C case temperature. The operating temperature range is from -65°C to 150°C.

 

The MJD200G comes in a TO-252-3, DPak (2 Leads + Tab), SC-63 package, designed for surface mounting. It is RoHS3 compliant and operates within a wide temperature range.

MJD200G Quick Information

Product Type: Transistor
Canonical Name: MJD200G NPN Transistor
Subcategory: Single

MJD200G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

MJD200G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MJD200G Features

  • NPN silicon power transistor for surface mount.
  • 25V collector-emitter voltage rating.
  • 5A continuous collector current capability.
  • 1.4W power dissipation at 25°C ambient.
  • Surface mount DPAK package.

MJD200G Applications

  • Suitable for low voltage applications.
  • Designed for low power circuits.
  • Ideal for high gain audio amplifiers.
  • Surface mount assembly.

MJD200G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage for the MJD200G?

The collector-emitter voltage for the MJD200G is 25V.

What is the continuous collector current of the MJD200G?

The continuous collector current for the MJD200G is 5A.

What is the power dissipation of the MJD200G at 25°C ambient?

The power dissipation of the MJD200G is 1.4W at 25°C ambient temperature.

What is the operating temperature range for the MJD200G transistor?

The operating temperature range for the MJD200G is -65°C to 150°C.

What is the package type for the MJD200G?

The MJD200G comes in a TO-252-3, DPak (2 Leads + Tab), SC-63 package.

Is the MJD200G RoHS compliant?

Yes, the MJD200G is RoHS3 compliant.

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