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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,232 pcs
|
4232 pcs | On Request | 1 | On Request | On Request | 1536+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Power Dissipation (Maximum @ TC=25 °C) | |
| Power Dissipation (Maximum) @ TA=25°C | |
| Supplier Device Package | |
| Thermal Resistance (Maximum) | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The MJD200G from On Semiconductor is a silicon NPN power transistor designed for surface mount applications. It is suitable for low voltage, low power, and high gain audio amplifier applications.
Key electrical specifications include a maximum collector-emitter voltage of 25V and a continuous collector current of 5A. The transistor offers a high DC current gain (hFE) of 45 minimum at 2A collector current and 1V Vce. Its saturation voltage (Vce(sat)) is a maximum of 1.8V at 1A collector current and 5A collector current.
This device has a power dissipation rating of 1.4W at 25°C ambient temperature and 12.5W at 25°C case temperature. The operating temperature range is from -65°C to 150°C.
The MJD200G comes in a TO-252-3, DPak (2 Leads + Tab), SC-63 package, designed for surface mounting. It is RoHS3 compliant and operates within a wide temperature range.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage for the MJD200G is 25V.
The continuous collector current for the MJD200G is 5A.
The power dissipation of the MJD200G is 1.4W at 25°C ambient temperature.
The operating temperature range for the MJD200G is -65°C to 150°C.
The MJD200G comes in a TO-252-3, DPak (2 Leads + Tab), SC-63 package.
Yes, the MJD200G is RoHS3 compliant.