MJD148T4G The ON Semiconductor MJD148T4G is an NPN silicon power transistor designed for general purpose amplifier and low speed switching applications. It features a 45V collector-emitter voltage and 4A continuous collector current.
Mfr Part #:

MJD148T4G

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor MJD148T4G is an NPN silicon power transistor designed for general purpose amplifier and low speed switching applications. It features a 45V collector-emitter voltage and 4A continuous collector current.
Total Stock: 52,753 pcs
$ Price Range: $0.99

MJD148T4G Available from 3 distributors

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
52,500 pcs
52500 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
128 pcs
128 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
125 pcs
125 pcs On Request 1 On Request On Request 18+ On Request On Request

MJD148T4G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base Current
Base-Emitter On Voltage
Collector Current - Peak
Collector Cutoff Current
Collector-Emitter Sustaining Voltage
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
ESD Human Body Model
ESD Machine Model
Emitter Cutoff Current
Frequency
Gain DC (Minimum @ IC = 10 mAdc, VCE = 5 Vdc)
Gain DC (Minimum @ IC = 2 Adc, VCE = 1 Vdc)
Gain DC (Minimum @ IC = 3 Adc, VCE = 1 Vdc)
Mounting Type
Operating Temperature
Power
Supplier Device Package
Thermal Resistance - Junction to Case
Thermal Resistance Junction-to-Ambient
Total Power Dissipation
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

MJD148T4G Description

Short technical summary and product information.

The ON Semiconductor MJD148T4G is an NPN silicon power transistor suitable for general purpose amplifier and low speed switching applications. It offers a collector-emitter voltage of 45V and a continuous collector current of 4A.

 

Key electrical characteristics include a DC current gain (hFE) of 85 at 500mA and 1V, and a collector-emitter saturation voltage (VCE(sat)) of 0.5V at 2A collector current and 200mA base current. The transistor operates with a transition frequency of 3MHz.

 

This device is housed in a DPAK (TO-252-3, DPak) surface mount package, designed for efficient heat dissipation with a junction-to-case thermal resistance of 6.25 °C/W. The operating junction temperature range is -55°C to +150°C.

 

The MJD148T4G is Pb-Free and RoHS Compliant, making it suitable for various electronic designs.

MJD148T4G Quick Information

Product Type: NPN Transistor
Canonical Name: MJD148T4G NPN Silicon Power Transistor
Subcategory: Single

MJD148T4G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

MJD148T4G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MJD148T4G Features

  • NPN silicon power transistor.
  • 45V collector-emitter voltage rating.
  • 4A continuous collector current.
  • DPAK surface mount package.
  • RoHS3 compliant and Pb-Free.

MJD148T4G Applications

  • General purpose amplifier circuits.
  • Low speed switching applications.
  • Power supply regulation circuits.
  • Motor control applications.

MJD148T4G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MJD148T4G?

The maximum collector-emitter voltage (VCEO) for the MJD148T4G is 45 Vdc.

What is the continuous collector current rating?

The continuous collector current (IC) rating for the MJD148T4G is 4 Adc.

What is the package type for the MJD148T4G?

The MJD148T4G is supplied in a DPAK (TO-252-3, DPak (2 Leads + Tab), SC-63) surface mount package.

What is the operating temperature range?

The operating and storage junction temperature range for the MJD148T4G is -55°C to +150°C.

What is the DC current gain (hFE) at 500mA?

The DC current gain (hFE) is typically 85 at an IC of 500mA and VCE of 1V.

What is the collector-emitter saturation voltage?

The collector-emitter saturation voltage (VCE(sat)) is a maximum of 0.5V when the collector current is 2A and the base current is 0.2A.

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