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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
10,800 pcs
|
10800 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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The MJD127RLG from ON Semiconductor is a PNP Darlington bipolar junction transistor (BJT) designed for power switching and amplification applications. It offers a high collector-emitter voltage rating of 100V and can handle a continuous collector current of up to 8A. The transistor features a high DC current gain (hFE) of 1000 at 4A, 4V, and a low saturation voltage of 4V at 80mA, 8A, ensuring efficient operation.
This device is housed in a TO-252-3, DPak (2 Leads + Tab), SC-63 surface mount package, making it suitable for automated assembly processes. It operates within a temperature range of -65°C to 150°C (TJ). The MJD127RLG is a robust component for power control circuits, motor drivers, and other demanding applications requiring high gain and current handling capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 100V.
The maximum continuous collector current is 8A.
The DC Current Gain (hFE) is 1000 at 4A, 4V.
The operating temperature range is -65°C to 150°C (TJ).
The MJD127RLG is in a TO-252-3, DPak (2 Leads + Tab), SC-63 package.
The MJD127RLG is a surface mount device.