MJD127G The ON Semiconductor MJD127G is a PNP Darlington power transistor designed for general purpose amplifier and low speed switching applications. It features a 100V collector-emitter voltage and 8A continuous collector current.
Mfr Part #:

MJD127G

Available from 5 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor MJD127G is a PNP Darlington power transistor designed for general purpose amplifier and low speed switching applications. It features a 100V collector-emitter voltage and 8A continuous collector current.
Total Stock: 21,793 pcs
$ Price Range: $0.99

MJD127G Available from 5 distributors

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MJD127G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base Current
Collector Current - Peak
Collector Cutoff Current
Collector-Emitter Voltage
Current
DC Current Gain (Minimum @ IC = 8 A, VCE = 4 V)
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter Cutoff Current
Frequency
Halogen Free
Mounting Type
Operating Temperature
Pb-Free
Power
Power Dissipation (Maximum) @ TA=25°C
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Vce Saturation (Maximum @ IC = 4 A, IB = 16 mAdc)
Voltage

MJD127G Description

Short technical summary and product information.

The MJD127G from ON Semiconductor is a PNP Darlington power transistor suitable for general purpose amplifier and low-speed switching applications. It is designed as a surface mount component in a DPAK package.

 

Key electrical characteristics include a maximum collector-emitter voltage of 100V and a continuous collector current rating of 8A. The transistor offers a high DC current gain (hFE) of 1000 typically at 4A and 4V. It has a maximum power dissipation of 20W at 25°C case temperature and 1.75W at 25°C ambient temperature.

 

The operating temperature range is from -65°C to 150°C. The MJD127G is Pb-free and Halogen-free, complying with RoHS standards. Its monolithic construction includes built-in base-emitter shunt resistors, and it is a surface mount replacement for older series like TIP120-TIP122 and TIP125-TIP127.

MJD127G Quick Information

Product Type: PNP Darlington Power Transistor
Series: MJD127
Canonical Name: MJD127G PNP Darlington Power Transistor
Subcategory: Darlington Transistor

MJD127G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MJD127G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MJD127G Features

  • PNP Darlington power transistor
  • 100V collector-emitter voltage
  • 8A continuous collector current
  • 20W power dissipation
  • Surface mount DPAK package

MJD127G Applications

  • Used in high-voltage switching circuits
  • Suitable for motor control applications
  • Ideal for power amplification tasks
  • Designed for high-temperature environments

MJD127G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MJD127G?

The maximum collector-emitter voltage (VCEO) for the MJD127G is 100 Vdc.

What is the continuous collector current rating of the MJD127G?

The MJD127G has a continuous collector current rating of 8 A.

What is the power dissipation of the MJD127G?

The MJD127G has a power dissipation of 20 W at 25°C case temperature and 1.75 W at 25°C ambient temperature.

What is the operating temperature range for the MJD127G?

The operating temperature range for the MJD127G is -65°C to 150°C.

What is the package type for the MJD127G?

The MJD127G is available in a TO-252-3, DPak (2 Leads + Tab), SC-63 package.

Is the MJD127G RoHS compliant?

Yes, the MJD127G is RoHS3 Compliant.

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