MJD122G The MJD122G is an NPN Darlington power transistor from ON Semiconductor designed for general purpose amplifier and low speed switching applications. It features a 100V collector-emitter voltage and 8A continuous collector current.
Mfr Part #:

MJD122G

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
The MJD122G is an NPN Darlington power transistor from ON Semiconductor designed for general purpose amplifier and low speed switching applications. It features a 100V collector-emitter voltage and 8A continuous collector current.
Total Stock: 10,483 pcs
$ Price Range: $0.99

MJD122G Available from 3 distributors

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6,216 pcs
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3,222 pcs
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1,045 pcs
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MJD122G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base Current
Collector Current - Peak
Collector Cutoff Current
Collector-Emitter Sustaining Voltage
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Mounting Type
Operating Temperature
Pb-Free
Power
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

MJD122G Description

Short technical summary and product information.

The MJD122G is a complementary Darlington power transistor manufactured by ON Semiconductor. It is designed for general purpose amplifier and low-speed switching applications. This NPN transistor offers a collector-emitter voltage of 100V and a continuous collector current of 8A.

 

Key electrical characteristics include a high DC current gain (hFE) of 1000 typically at 4A and 4V, and a Vce saturation voltage of 4V maximum at 8A and 80mA base current. The transistor operates at a transition frequency of 4MHz and has a maximum power dissipation of 20W at 25°C.

 

Designed for surface mount applications, the MJD122G comes in a DPAK package (TO-252-3, SC-63). Its monolithic construction includes built-in base-emitter shunt resistors. The operating temperature range is -65°C to 150°C (TJ). This device is Pb-Free and Halogen Free, meeting RoHS compliance standards.

MJD122G Quick Information

Product Type: Bipolar Transistor
Canonical Name: MJD122G NPN Darlington Power Transistor
Subcategory: NPN Darlington

MJD122G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MJD122G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MJD122G Features

  • NPN Darlington power transistor
  • 100V collector-emitter voltage
  • 8A continuous collector current
  • 20W maximum power dissipation
  • Surface mount DPAK package

MJD122G Applications

  • General purpose amplifier applications
  • Low speed switching applications
  • Power management circuits
  • Switching power supplies

MJD122G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MJD122G?

The maximum collector-emitter voltage for the MJD122G is 100 Vdc.

What is the continuous collector current rating of the MJD122G?

The MJD122G has a continuous collector current rating of 8 Adc.

What is the power dissipation of the MJD122G at 25°C?

The MJD122G has a total power dissipation of 20 W at 25°C.

What is the operating temperature range for the MJD122G transistor?

The operating temperature range for the MJD122G is -65°C to 150°C (TJ).

What package type is the MJD122G available in?

The MJD122G is available in a DPAK package, also referred to as TO-252-3 or SC-63.

Is the MJD122G RoHS compliant?

Yes, the MJD122G is RoHS3 Compliant.

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