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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
9,000 pcs
|
9000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base - Emitter Saturation Voltage | |
| Base Current | |
| Base-Emitter On Voltage | |
| Collector Peak Current | |
| Collector-Emitter Sustaining Voltage | |
| Current | |
| Current Collector (Nominal) | |
| Current Collector Cutoff (Maximum @ VCB = 100 V) | |
| Current Collector Cutoff (Maximum @ VCE = 100 V, Tj = 125 °C) | |
| Current Collector Cutoff (Maximum @ VCE = 50 V) | |
| Current Gain Hfe (Minimum @ IC = 8 A, VCE = 4 V) | |
| Current Gain Hfe (Minimum/Typical @ IC = 4 A, VCE = 4 V) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter Cut-off Current | |
| Max Operating Junction Temperature | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Thermal Resistance (Junction-Ambient) | |
| Thermal Resistance Junction-Case | |
| Total Dissipation | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| Voltage Collector Emitter (Nominal @ IB = 0) | |
| Voltage Collector Emitter Saturation (Maximum @ IC = 4 A, IB = 16 mA) | |
| Voltage Collector Emitter Saturation (Maximum @ IC = 8 A, IB = 80 mA) |
The STMicroelectronics MJD122-1 is a complementary NPN power Darlington transistor manufactured using Epitaxial Base technology. It is suitable for general purpose switching and amplifier applications.
Key electrical specifications include a collector-emitter voltage of 100V and a continuous collector current of 8A. The transistor can handle peak collector currents up to 8A and has a maximum power dissipation of 20W at 25°C case temperature. The DC current gain (hFE) is a minimum of 1000 at 4A and 4V, with a typical value of 12000.
This device features low base-drive requirements and an integrated antiparallel collector-emitter diode. It is electrically similar to the TIP122 and TIP127 series.
The MJD122-1 is supplied in a TO-251 (IPAK) through-hole power package, making it suitable for various circuit designs requiring robust power handling.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the MJD122-1 is 100V.
The MJD122-1 has a continuous collector current rating of 8A.
The total power dissipation (Ptot) for the MJD122-1 at 25°C is 20W.
The MJD122-1 is supplied in a TO-251 (IPAK) package.
The maximum operating junction temperature (Tj) for the MJD122-1 is 150°C.