MJD117G The MJD117G from ON Semiconductor is a PNP Darlington power transistor designed for general purpose power and switching applications. It features a 100V collector-emitter voltage and 2A continuous collector current.
Mfr Part #:

MJD117G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The MJD117G from ON Semiconductor is a PNP Darlington power transistor designed for general purpose power and switching applications. It features a 100V collector-emitter voltage and 2A continuous collector current.
Total Stock: 72,120 pcs
$ Price Range: $0.99

MJD117G Available from 1 distributor

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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72,120 pcs
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MJD117G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Operating and Storage Junction Temperature Range
Power
Power Dissipation (Maximum @ TC=25 °C)
Power Dissipation (Maximum) @ TA=25°C
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
current (Maximum @ Peak)
voltage (Minimum @ IC = 30 mAdc, IB = 0)

MJD117G Description

Short technical summary and product information.

The MJD117G is a PNP Darlington power transistor manufactured by ON Semiconductor. It is designed for general-purpose power and switching applications, including output or driver stages in switching regulators, converters, and power amplifiers.

 

Key electrical characteristics include a collector-emitter voltage of 100V and a continuous collector current of 2A. It offers a high DC current gain (hFE) of 1000 at 2A and 3V. The transistor is rated for a maximum power dissipation of 1.75W at 25°C ambient temperature when surface mounted.

 

This device comes in a DPAK surface mount package (TO-252-3, DPak). The operating temperature range is -65°C to 150°C (TJ). It is electrically similar to the TIP31 and TIP32 series.

 

The MJD117G is Pb-Free and RoHS Compliant, making it suitable for environmentally conscious designs.

MJD117G Quick Information

Product Type: Power Transistor
Canonical Name: MJD117G PNP Darlington Power Transistor
Subcategory: Single

MJD117G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

MJD117G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MJD117G Features

  • PNP Darlington power transistor
  • 100V collector-emitter voltage
  • 2A continuous collector current
  • High DC current gain (hFE)
  • DPAK surface mount package

MJD117G Applications

  • Switching regulators
  • Power converters
  • Output driver stages
  • Power amplifiers

MJD117G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MJD117G?

The maximum collector-emitter voltage is 100 Vdc.

What is the continuous collector current rating?

The continuous collector current is 2 A.

What is the operating temperature range?

The operating and storage junction temperature range is -65°C to 150°C.

What type of transistor is the MJD117G?

The MJD117G is a PNP Darlington power transistor.

What package type is the MJD117G supplied in?

It is supplied in a TO-252-3, DPak (2 Leads + Tab), SC-63 package.

Is the MJD117G RoHS compliant?

Yes, the MJD117G is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the MJD117G?

The Moisture Sensitivity Level is 1.

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