| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4,757 pcs
|
4757 pcs | On Request | 1 | On Request | On Request | 98+ | On Request | On Request |
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The MJD117 is an NPN Darlington transistor manufactured by Motorola Semiconductor. This component is designed for general-purpose applications requiring high current gain.
Key electrical specifications include a collector-emitter breakdown voltage of 100V and a maximum collector current capability of 2A. The DC current gain (hFE) is a minimum of 1000 at 2A and 3V. The Vce saturation voltage is a maximum of 3V at 40mA and 4A. The transition frequency is 25MHz.
This transistor is packaged in a DPAK (TO-252-3) surface mount package, suitable for automated assembly processes. The operating temperature range is from -65°C to 150°C (TJ). The maximum power dissipation is rated at 20W.
Environmental compliance includes RoHS3 compliance, MSL 1, and REACH unaffected status. This component is ideal for various electronic circuits requiring amplification or switching capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.84 | $1.84 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage is 100V.
The maximum collector current is 2A.
The minimum DC current gain (hFE) is 1000 at 2A and 3V.
The MJD117 is an NPN Darlington transistor.
The MJD117 is supplied in a DPAK package, specifically TO-252-3, DPak (2 Leads + Tab), SC-63.
The operating temperature range is -65°C to 150°C (TJ).