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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
385 pcs
|
385 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Current - Collector Cutoff | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Packages | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The MJD112TF is a high-performance NPN Darlington transistor manufactured by On Semiconductor. This component is designed for surface mount applications and comes in a TO-252-3, DPAK package.
Key electrical specifications include a collector-emitter breakdown voltage of 100V and a maximum collector current of 2A. It features a high DC current gain (hFE) of 1000 at 2A and 3V, with a Vce saturation of 3V at 40mA and 4A. The transition frequency is rated at 25MHz.
With an operating temperature range up to 150°C (TJ) and a maximum power dissipation of 1.75W, the MJD112TF is suitable for various power switching and amplification applications. The device is packaged in Tape & Reel (TR) for automated assembly processes.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating temperature range is up to 150°C (TJ).
The MJD112TF is supplied in a TO-252-3, DPAK (2 Leads + Tab), SC-63 package.
The maximum collector current is 2A.
The collector-emitter breakdown voltage is 100V.
The DC current gain (hFE) is a minimum of 1000 at 2A collector current and 3V collector-emitter voltage.