Ready to onboard?
Are you ready to join DistyParts and
grow your business?
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
17,500 pcs
|
17500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
4,497 pcs
|
4497 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request | |
|
3,515 pcs
|
3515 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,480 pcs
|
1480 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
484 pcs
|
484 pcs | On Request | 1 | On Request | On Request | 714 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base Current | |
| Collector Current - Peak | |
| Collector-Emitter Sustaining Voltage | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Total Power Dissipation (@ TA = 25 °C) | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The ON Semiconductor MJD112T4G is a silicon power transistor featuring a complementary Darlington configuration. It is designed for general purpose power and switching applications, serving as an output or driver stage in systems like switching regulators, converters, and power amplifiers.
This NPN transistor boasts a maximum collector-emitter voltage (VCEO) of 100V and a continuous collector current (IC) of 2A, with a peak current capability of 4A. It offers a high DC current gain (hFE) of 1000 at 2A and 3V, and a saturation voltage (Vce) of 3V maximum at 40mA base current and 4A collector current.
The MJD112T4G is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package, making it suitable for space-constrained designs. It operates within a temperature range of -65°C to 150°C (TJ) and has a total power dissipation of 20W at 25°C case temperature.
This device is Pb-free and RoHS compliant, indicating its suitability for environmentally conscious manufacturing processes. Its electrical characteristics and robust packaging make it a reliable choice for various power switching applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the MJD112T4G is 100 Vdc.
The MJD112T4G has a continuous collector current (IC) rating of 2 Adc.
The operating and storage junction temperature range for the MJD112T4G is -65°C to 150°C.
The MJD112T4G is supplied in a TO-252-3, DPak (2 Leads + Tab), SC-63 package.
Yes, the MJD112T4G is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the MJD112T4G is 1 Unlimited.