MJD112RLG The MJD112RLG from ON Semiconductor is an NPN Darlington power transistor designed for general purpose power and switching applications. It features a 100V collector-emitter voltage and 2A continuous collector current.
Mfr Part #:

MJD112RLG

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
The MJD112RLG from ON Semiconductor is an NPN Darlington power transistor designed for general purpose power and switching applications. It features a 100V collector-emitter voltage and 2A continuous collector current.
Total Stock: 3,536 pcs
$ Price Range: $0.99

MJD112RLG Available from 3 distributors

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Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,820 pcs
2820 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
715 pcs
715 pcs On Request 1 On Request On Request N/A On Request On Request
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1 pcs
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MJD112RLG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base Current
Collector Current - Peak
Collector-Base Voltage
Collector-Emitter Sustaining Voltage
Collector-Emitter Voltage
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Voltage
Frequency
Mounting Type
Operating Temperature
PD (Maximum @ Tc=25 °C)
Power
Supplier Device Package
Thermal Resistance - Junction to Case
Thermal Resistance Junction-to-Ambient
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

MJD112RLG Description

Short technical summary and product information.

The MJD112RLG is an NPN Darlington power transistor manufactured by ON Semiconductor. It is designed for general-purpose power and switching applications, including output or driver stages in switching regulators, converters, and power amplifiers.

 

Key electrical characteristics include a collector-emitter voltage of 100V, a continuous collector current of 2A, and a peak collector current of 4A. The DC current gain (hFE) is a minimum of 1000 at 2A and 3V. The saturation voltage (Vce) is a maximum of 3V at 40mA base current and 4A collector current. The device operates at frequencies up to 25MHz.

 

This transistor has a total power dissipation of 1.75W at 25°C ambient temperature and 20W at 25°C case temperature. It is housed in a DPAK surface mount package (TO-252-3, DPak (2 Leads + Tab), SC-63) and operates within a temperature range of -65°C to 150°C.

 

The MJD112RLG is Pb-free and RoHS compliant. It is electrically similar to the TIP31 and TIP32 series.

MJD112RLG Quick Information

Product Type: Power Transistor
Canonical Name: MJD112RLG NPN Darlington Power Transistor
Subcategory: Power Transistor

MJD112RLG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

MJD112RLG Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MJD112RLG Features

  • NPN Darlington power transistor
  • 100V collector-emitter voltage
  • 2A continuous collector current
  • DPAK surface mount package
  • Pb-free and RoHS compliant

MJD112RLG Applications

  • Switching regulators
  • Power converters
  • Power amplifiers
  • Output driver stages

MJD112RLG FAQs

5 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating for the MJD112RLG?

The collector-emitter voltage rating is 100 Vdc.

What is the continuous collector current for the MJD112RLG?

The continuous collector current is 2 Adc.

What type of package is the MJD112RLG in?

The MJD112RLG is in a TO-252-3, DPak (2 Leads + Tab), SC-63 package.

What is the operating temperature range for the MJD112RLG?

The operating temperature range is -65°C to 150°C.

Is the MJD112RLG RoHS compliant?

Yes, the MJD112RLG is RoHS3 compliant.

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