MJD112G The MJD112G is an NPN Darlington power transistor from On Semiconductor. It offers a 100V collector-emitter voltage and 2A continuous collector current, suitable for power switching applications.
Mfr Part #:

MJD112G

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
The MJD112G is an NPN Darlington power transistor from On Semiconductor. It offers a 100V collector-emitter voltage and 2A continuous collector current, suitable for power switching applications.
Total Stock: 31,247 pcs
$ Price Range: $0.99

MJD112G Available from 3 distributors

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Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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22,020 pcs
22020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
8,925 pcs
8925 pcs On Request 1 On Request On Request On Request On Request On Request
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302 pcs
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MJD112G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Operating and Storage Junction Temperature Range
Power
Power Dissipation (Maximum @ TC=25 °C)
Power Dissipation (Maximum) @ TA=25°C
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
Voltage - Maximum

MJD112G Description

Short technical summary and product information.

The MJD112G is an NPN Darlington power transistor designed by On Semiconductor for general purpose power and switching applications. It features a high collector-emitter voltage of 100V and can handle a continuous collector current of 2A, with a peak current capability of 4A.

 

This transistor is housed in a DPAK surface mount package (TO-252-3, DPak (2 Leads + Tab), SC-63), making it suitable for space-constrained designs. It offers a DC current gain (hFE) of 1000 at 2A and 3V, with a Vce saturation of 3V at 40mA and 4A.

 

The operating temperature range is from -65°C to 150°C (TJ). The device is Pb-free and RoHS compliant, indicating its suitability for modern electronic manufacturing processes.

 

Applications include output or driver stages in switching regulators, converters, and power amplifiers. Its robust construction and electrical characteristics make it a reliable choice for demanding power applications.

MJD112G Quick Information

Product Type: NPN Darlington Power Transistor
Canonical Name: MJD112G NPN Darlington Power Transistor
Subcategory: Bipolar (BJT) - Single

MJD112G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

MJD112G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MJD112G Features

  • NPN Darlington power transistor.
  • 100V collector-emitter voltage.
  • 2A continuous collector current.
  • DPAK surface mount package.
  • RoHS3 compliant.

MJD112G Applications

  • Used in switching regulators.
  • Suitable for power converters.
  • Ideal for power amplifier stages.
  • General purpose power switching.

MJD112G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating for the MJD112G?

The collector-emitter sustaining voltage is 100 Vdc.

What is the continuous collector current for the MJD112G?

The continuous collector current is 2 A.

What is the operating temperature range for the MJD112G?

The operating and storage junction temperature range is -65°C to 150°C.

What package type is the MJD112G supplied in?

The MJD112G is supplied in a TO-252-3, DPak (2 Leads + Tab), SC-63 package.

Is the MJD112G RoHS compliant?

Yes, the MJD112G is RoHS3 compliant.

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