| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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800 pcs
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800 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The ON Semiconductor MJB5742T4G is a high-performance NPN Silicon Power Darlington Transistor designed for demanding power switching applications in inductive circuits. It features a high collector-emitter voltage rating of 400V (VCEO(sus)) and can handle a continuous collector current of 8A, with a peak current capability of 16A.
With a total device dissipation of 100W at 25°C case temperature, this transistor is suitable for applications requiring significant power handling. The Darlington configuration provides high current gain (hFE) of 200 at 4A and 5V, and a saturation voltage (VCE(sat)) of 3V at 400mA and 8A.
The operating temperature range is from -65°C to 150°C (TJ), and it is housed in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package, designed for surface mounting. The device is Pb-Free and RoHS Compliant.
Applications include small engine ignition, switching regulators, inverters, solenoid and relay drivers, and motor controls.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter sustaining voltage (VCEO(sus)) for the MJB5742T4G is 400 Vdc.
The continuous collector current (IC) rating is 8 Adc.
The total device dissipation (PD) is 100 W at 25°C case temperature.
The operating and storage junction temperature range is -65°C to 150°C.
The MJB5742T4G is an NPN Darlington transistor.
The MJB5742T4G is supplied in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package.
Yes, the MJB5742T4G is RoHS3 Compliant.