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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,600 pcs
|
1600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Operating and Storage Junction Temperature Range | |
| Power | |
| Power Dissipation (Maximum @ TC=25 °C) | |
| Power Dissipation (Maximum) @ TA=25°C | |
| Supplier Device Package | |
| Thermal Resistance (Maximum @ Junction to case) | |
| Thermal Resistance (Maximum @ Junction-to-Ambient) | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| current (Maximum @ VCE = Rated VCEO, VBE = 0) | |
| current (Maximum @ VEB = 5 Vdc) | |
| voltage (Maximum @ IC = 8 Adc, IB = 0.4 Adc) | |
| voltage (Maximum @ IC = 8 Adc, IB = 0.8 Adc) | |
| voltage (Maximum @ Ib = 400 mA, Ic = 8 A) | |
| voltage (Minimum @ IC = 30 mA, IB = 0) |
The ON Semiconductor MJB45H11T4G is a PNP bipolar junction transistor (BJT) designed for general-purpose power amplification and switching applications. It is suitable for use in output or driver stages of switching regulators, converters, and power amplifiers.
Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of 80V and a continuous collector current (IC) of 10A, with a peak current of 20A. The transistor offers a low collector-emitter saturation voltage (VCE(sat)) of 1.0V at 8A and a DC current gain (hFE) of 40 minimum at 4A and 1V. It operates with a frequency up to 40MHz.
This device has a total power dissipation of 50W at 25°C case temperature and 2.0W at 25°C ambient temperature. The operating and storage junction temperature range is from -55°C to 150°C. Thermal resistance from junction-to-case is 2.5°C/W, and junction-to-ambient is 75°C/W.
The MJB45H11T4G is available in a D2PAK surface mount package (TO-263-3, D²Pak (2 Leads + Tab), TO-263AB). It meets UL 94 V-0 flammability standards for its epoxy. ESD ratings are high, with a Human Body Model of 3B (>8000V) and a Machine Model of C (>400V). Pb-free packages are available.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the MJB45H11T4G is 80 Vdc.
The continuous collector current (IC) for the MJB45H11T4G is 10 Adc.
The total power dissipation for the MJB45H11T4G at a case temperature of 25°C is 50 W.
The operating and storage junction temperature range for the MJB45H11T4G is -55°C to 150°C.
The MJB45H11T4G is supplied in a D2PAK surface mount package.
Yes, the MJB45H11T4G is RoHS3 Compliant.