MJB45H11G The MJB45H11G is a PNP bipolar junction transistor from ON Semiconductor. It is designed for general purpose power amplification and switching applications.
Mfr Part #:

MJB45H11G

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
The MJB45H11G is a PNP bipolar junction transistor from ON Semiconductor. It is designed for general purpose power amplification and switching applications.
Total Stock: 2,463 pcs
$ Price Range: $0.99

MJB45H11G Available from 3 distributors

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Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,378 pcs
2378 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
75 pcs
75 pcs On Request 1 On Request On Request 2026-02-25 06:16:38 On Request On Request
Non-Authorised Inventory information
10 pcs
10 pcs On Request 1 On Request On Request On Request On Request On Request

MJB45H11G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Lead Style
Mounting Type
Operating Temperature
Operating and Storage Junction Temperature Range
Power
Power Dissipation (Maximum @ TC=25 °C)
Power Dissipation (Maximum) @ TA=25°C
Supplier Device Package
Thermal Resistance (Maximum @ Junction to case)
Thermal Resistance (Maximum @ Junction-to-Ambient)
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
current (Maximum @ VCE = Rated VCEO, VBE = 0)
current (Maximum @ VEB = 5 Vdc)
voltage (Maximum @ IC = 8 Adc, IB = 0.4 Adc)
voltage (Maximum @ IC = 8 Adc, IB = 0.8 Adc)
voltage (Maximum @ Ib = 400 mA, Ic = 8 A)
voltage (Minimum @ IC = 30 mA, IB = 0)

MJB45H11G Description

Short technical summary and product information.

The MJB45H11G is a PNP power transistor manufactured by ON Semiconductor, designed for general-purpose power amplification and switching applications. It features a maximum collector-emitter voltage of 80V and a continuous collector current of 10A, with a peak current capability of 20A.

 

This transistor offers a low collector-emitter saturation voltage of 1.0V at 8A and fast switching speeds. It is suitable for use in switching regulators, converters, and power amplifier output or driver stages.

 

The MJB45H11G is housed in a D2PAK (TO-263) surface-mount package, making it suitable for automated assembly processes. It operates within a junction temperature range of -55°C to 150°C and has a total power dissipation of 50W at a case temperature of 25°C.

 

Key electrical characteristics include a DC current gain (hFE) of 40 at 4A/1V and a frequency response up to 40MHz. The device also meets UL 94V-0 flammability standards for its epoxy packaging.

MJB45H11G Quick Information

Product Type: PNP Transistor
Canonical Name: MJB45H11G PNP Power Transistor
Subcategory: Single

MJB45H11G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MJB45H11G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MJB45H11G Features

  • PNP bipolar junction transistor.
  • 80V collector-emitter voltage rating.
  • 10A continuous collector current.
  • Low VCE(sat) of 1.0V at 8A.
  • D2PAK surface mount package.

MJB45H11G Applications

  • General purpose power amplification.
  • Switching regulator applications.
  • Converter output stages.
  • Power amplifier driver stages.

MJB45H11G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the operating temperature range for the MJB45H11G transistor?

-55°C to 150°C

What is the package type for the MJB45H11G?

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

What is the maximum collector-emitter voltage for the MJB45H11G?

80 Vdc

What is the continuous collector current rating for the MJB45H11G?

10 Adc

What is the maximum collector-emitter saturation voltage (Vce sat) for the MJB45H11G?

1.0 Vdc

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