MJB44H11T4G The ON Semiconductor MJB44H11T4G is an NPN power transistor designed for general purpose amplification and switching applications. It offers a high voltage rating and significant current handling capability.
Mfr Part #:

MJB44H11T4G

Available from 5 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor MJB44H11T4G is an NPN power transistor designed for general purpose amplification and switching applications. It offers a high voltage rating and significant current handling capability.
Total Stock: 20,939 pcs
$ Price Range: $0.99

MJB44H11T4G Available from 5 distributors

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MJB44H11T4G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector Current - Peak
Collector-Emitter Sustaining Voltage
Current
Current Cutoff (Maximum @ VCE = Rated VCEO, VBE = 0)
Current Cutoff (Maximum @ VEB = 5 Vdc)
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Supplier Device Package
Thermal Resistance - Junction to Case
Thermal Resistance Junction-to-Ambient
Total Power Dissipation
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
Voltage Saturation (Maximum @ IC = 8 Adc, IB = 0.8 Adc)

MJB44H11T4G Description

Short technical summary and product information.

The MJB44H11T4G from ON Semiconductor is a complementary NPN power transistor suitable for general purpose power amplification and switching. It is designed for applications such as switching regulators, converters, and power amplifiers.

 

Key electrical characteristics include a collector-emitter voltage of 80V, a continuous collector current of 10A, and a peak current of 20A. The transistor offers a low collector-emitter saturation voltage of 1V maximum at 8A and fast switching speeds. It has a DC current gain (hFE) of 40 minimum at 4A and 1V, and a frequency capability of 50MHz.

 

This device is housed in a D2PAK (TO-263AB) surface mount package, making it suitable for automated assembly processes. The operating temperature range is -55°C to 150°C. The epoxy meets UL 94 V-0 flammability standards.

 

With its robust specifications, the MJB44H11T4G is a reliable choice for demanding power applications requiring efficient amplification and switching.

MJB44H11T4G Quick Information

Product Type: NPN Power Transistor
Canonical Name: MJB44H11T4G NPN Power Transistor
Subcategory: Single

MJB44H11T4G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

MJB44H11T4G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MJB44H11T4G Features

  • 80V collector-emitter voltage rating.
  • 10A continuous collector current.
  • Low 1V saturation voltage.
  • D2PAK surface mount package.
  • Wide -55°C to 150°C operating temperature.

MJB44H11T4G Applications

  • Switching regulators and converters.
  • General purpose power amplification.
  • Output driver stages.
  • Power amplifier circuits.

MJB44H11T4G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MJB44H11T4G?

The maximum collector-emitter voltage is 80 Vdc.

What is the continuous collector current rating?

The continuous collector current is 10 Adc.

What is the power dissipation at 25°C case temperature?

The total power dissipation is 50 W at TC = 25°C.

What is the operating temperature range?

The operating and storage junction temperature range is -55°C to 150°C.

What is the package type for the MJB44H11T4G?

The package type is TO-263-3, D²Pak (2 Leads + Tab), TO-263AB.

Is the MJB44H11T4G RoHS compliant?

Yes, it is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level is 1.

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