MJB44H11G The MJB44H11G is an NPN power transistor from ON Semiconductor designed for general purpose amplification and switching applications. It offers robust performance with an 80V rating and 10A current capability.
Mfr Part #:

MJB44H11G

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
The MJB44H11G is an NPN power transistor from ON Semiconductor designed for general purpose amplification and switching applications. It offers robust performance with an 80V rating and 10A current capability.
Total Stock: 26,396 pcs
$ Price Range: $0.99

MJB44H11G Available from 3 distributors

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24,550 pcs
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923 pcs
923 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
923 pcs
923 pcs On Request 1 On Request On Request On Request On Request On Request

MJB44H11G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector-Emitter Sustaining Voltage
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Power Dissipation (Maximum) @ TA=25°C
Supplier Device Package
Thermal Resistance - Junction to Case
Thermal Resistance Junction-to-Ambient
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
current (Maximum @ Peak)

MJB44H11G Description

Short technical summary and product information.

The ON Semiconductor MJB44H11G is a complementary NPN power transistor suitable for general purpose power amplification and switching. It is designed for applications such as switching regulators, converters, and power amplifiers.

 

Key electrical characteristics include a maximum collector-emitter voltage of 80V and a continuous collector current of 10A. The transistor features a low collector-emitter saturation voltage of 1V at 8A and a DC current gain (hFE) of 40 minimum at 4A and 1V. It operates at frequencies up to 50MHz.

 

This device is housed in a TO-263-3, D²Pak surface mount package, facilitating integration into compact electronic designs. The operating temperature range is -55°C to 150°C. The total power dissipation is rated at 50W at 25°C case temperature and 2W at 25°C ambient temperature.

 

The MJB44H11G is available in Pb-Free packages and meets UL 94V-0 flammability standards for its epoxy. ESD ratings are high, with a Human Body Model rating of 3B (>8000V) and a Machine Model rating of C (>400V).

MJB44H11G Quick Information

Product Type: NPN Power Transistor
Canonical Name: MJB44H11G NPN Power Transistor
Subcategory: NPN

MJB44H11G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb−Free Packages are Available

MJB44H11G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MJB44H11G Features

  • 80V collector-emitter voltage rating.
  • 10A continuous collector current.
  • Low collector-emitter saturation voltage.
  • D2PAK surface mount package.
  • Wide operating temperature range.

MJB44H11G Applications

  • Switching regulators and converters.
  • General purpose power amplification.
  • Output driver stages.
  • Power amplifier circuits.

MJB44H11G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MJB44H11G?

The maximum collector-emitter voltage is 80 Vdc.

What is the continuous collector current rating?

The continuous collector current is 10 Adc.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C.

What package type is the MJB44H11G supplied in?

It is supplied in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package.

How is the MJB44H11G mounted?

The mounting type is Surface Mount.

What is the collector-emitter saturation voltage at 8A current?

The collector-emitter saturation voltage is 1 Vdc at 400mA base current and 8A collector current.

What is the DC current gain (hFE) at 4A?

The minimum DC current gain (hFE) is 40 at 4A collector current and 1V collector-emitter voltage.

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