MJB42CT4G The MJB42CT4G is a PNP bipolar junction transistor from ON Semiconductor. It is designed for surface mount applications and offers a 100V collector-emitter voltage and 6A continuous current.
Mfr Part #:

MJB42CT4G

Available from 4 distributors
Mfr Name: On Semiconductor
On Semiconductor
The MJB42CT4G is a PNP bipolar junction transistor from ON Semiconductor. It is designed for surface mount applications and offers a 100V collector-emitter voltage and 6A continuous current.
Total Stock: 8,615 pcs
$ Price Range: $0.99

MJB42CT4G Available from 4 distributors

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MJB42CT4G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Current (Maximum)
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Lead Style
Maximum Lead Temperature for Soldering Purposes
Mounting Type
Operating Temperature
Operating and Storage Junction Temperature Range
Power
Power Dissipation (Maximum @ TC=25 °C)
Power Dissipation (Maximum) @ TA=25°C
Supplier Device Package
Tape & Reel
Thermal Resistance (Maximum @ Junction to case)
Thermal Resistance (Maximum @ Junction-to-Ambient (Note 2)
Thermal Resistance (Maximum @ Junction-to-Ambient)
Transistor Type
Unclamped inductive load energy
Vce Saturation (Max) @ Ib, Ic
Voltage

MJB42CT4G Description

Short technical summary and product information.

The MJB42CT4G is a PNP silicon power transistor manufactured by ON Semiconductor. It is designed for surface mount applications and comes in a D2PAK package. This transistor features a maximum collector-emitter voltage of 100V and a continuous collector current of 6A.

 

Key electrical characteristics include a maximum power dissipation of 65W at 25°C case temperature and 2W at 25°C ambient temperature. It has a DC current gain (hFE) of at least 15 at 3A and 4V, and a Vce saturation of 1.5V maximum at 600mA base current and 6A collector current. The transistor operates over a wide temperature range of -65°C to 150°C.

 

The D2PAK (TO-263) package is suitable for automated assembly processes, and the device is lead-formed for surface mount applications. The MJB42CT4G is electrically equivalent to the TIP41 and TIP42 series. It is also available in Pb-free packages.

 

This transistor is suitable for various power switching and amplification applications where a robust PNP device in a surface-mount package is required. Its complementary NPN counterpart is the MJB41CT4G.

MJB42CT4G Quick Information

Product Type: PNP Power Transistor
Canonical Name: MJB42CT4G PNP Power Transistor
Subcategory: PNP

MJB42CT4G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

MJB42CT4G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MJB42CT4G Features

  • PNP silicon power transistor
  • 100V collector-emitter voltage
  • 6A continuous collector current
  • D2PAK surface mount package
  • Wide operating temperature range

MJB42CT4G Applications

  • Power switching applications
  • Amplification circuits
  • General purpose PNP applications
  • Automotive applications (NJV prefix)

MJB42CT4G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MJB42CT4G?

The maximum collector-emitter voltage is 100 Vdc.

What is the continuous collector current rating?

The continuous collector current is 6 A.

What type of package does the MJB42CT4G use?

It uses a D2PAK (TO-263-3, D²Pak (2 Leads + Tab), TO-263AB) surface mount package.

What is the operating temperature range?

The operating and storage junction temperature range is -65°C to 150°C.

Is the MJB42CT4G RoHS compliant?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level is 1 Unlimited.

What is the thermal resistance from junction to case?

The thermal resistance, junction-to-case is 1.92 °C/W.

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