MJB41CT4G The MJB41CT4G is an NPN power transistor from ON Semiconductor. It features a 100V collector-emitter voltage and 6A continuous current.
Mfr Part #:

MJB41CT4G

Available from 4 distributors
Mfr Name: On Semiconductor
On Semiconductor
The MJB41CT4G is an NPN power transistor from ON Semiconductor. It features a 100V collector-emitter voltage and 6A continuous current.
Total Stock: 32,960 pcs
$ Price Range: $0.99

MJB41CT4G Available from 4 distributors

Authorised
Non-Authorised

MJB41CT4G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base Current
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Lead Style
Maximum Lead Temperature for Soldering Purposes
Mounting Type
Operating Temperature
Operating and Storage Junction Temperature Range
Power
Power Dissipation (Maximum @ TC=25 °C)
Power Dissipation (Maximum) @ TA=25°C
Supplier Device Package
Thermal Resistance - Junction to Case
Thermal Resistance Ja (Maximum @ Note 2)
Thermal Resistance Ja (Maximum)
Transistor Type
Unclamped inductive load energy
Vce Saturation (Max) @ Ib, Ic
Voltage
current (Maximum @ Peak)

MJB41CT4G Description

Short technical summary and product information.

The MJB41CT4G is an NPN bipolar junction transistor (BJT) designed for power applications. It offers a maximum collector-emitter voltage of 100V and a continuous collector current of 6A.

 

With a power dissipation rating of 2W at 25°C ambient temperature and 65W at 25°C case temperature, this transistor is suitable for various power switching and amplification tasks. It operates within a junction temperature range of -65°C to 150°C.

 

The transistor is housed in a D2PAK (TO-263-3) surface mount package, facilitating integration into compact electronic designs. Its thermal resistance from junction to case is 1.92°C/W, and junction to ambient is 62.5°C/W.

 

Key electrical characteristics include a DC current gain (hFE) of at least 15 at 3A and 4V, and a Vce saturation of a maximum of 1.5V at 600mA and 6A. The device has a frequency response up to 3MHz.

MJB41CT4G Quick Information

Product Type: NPN Transistor
Canonical Name: MJB41CT4G NPN Power Transistor
Subcategory: Single

MJB41CT4G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free Packages are Available

MJB41CT4G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MJB41CT4G Features

  • 100V collector-emitter voltage rating.
  • 6A continuous collector current.
  • 65W power dissipation at 25°C case.
  • D2PAK surface mount package.
  • NPN bipolar junction transistor.

MJB41CT4G Applications

  • Used in high-voltage switching applications
  • Suitable for motor control circuits
  • Ideal for power amplification tasks
  • Designed for high-density circuit layouts

MJB41CT4G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MJB41CT4G?

The maximum collector-emitter voltage is 100 Vdc.

What is the continuous collector current rating?

The continuous collector current is 6 A.

What is the power dissipation at 25°C case temperature?

The total power dissipation at 25°C case temperature is 65 W.

What is the operating temperature range?

The operating and storage junction temperature range is -65°C to 150°C.

What type of transistor is the MJB41CT4G?

The MJB41CT4G is an NPN transistor.

What package is the MJB41CT4G supplied in?

The MJB41CT4G is supplied in a D2PAK (TO-263-3, D²Pak (2 Leads + Tab), TO-263AB) package.

Home
Account

Categories