| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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15 pcs
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15 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Vce Saturation (Max) |
The MJ8505 from Motorola Semiconductor is an NPN bipolar junction transistor designed for various electronic applications. It features a maximum collector-emitter breakdown voltage of 90V and can handle a continuous collector current of up to 30A.
With a maximum power dissipation of 200W, this transistor is suitable for power switching and amplification tasks. The operating temperature range is from -65°C to 200°C, providing robustness in demanding environments. The DC current gain (hFE) is a minimum of 25 at 7.5A and 2V.
The MJ8505 is packaged in a TO-204AA, TO-3 configuration, designed for through-hole mounting. Its Vce saturation is a maximum of 800mV at 750mA and 7.5A, with a collector cutoff current of 1mA. The transition frequency is 2MHz.
This component is RoHS3 compliant, with an MSL rating of 1 Unlimited and REACH unaffected status. It is a reliable choice for power electronics designs requiring high current and voltage capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.93 | $1.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter breakdown voltage for the MJ8505 is 90V.
The maximum continuous collector current for the MJ8505 is 30A.
The maximum power dissipation for the MJ8505 is 200W.
The MJ8505 operates within a temperature range of -65°C to 200°C.
The MJ8505 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the MJ8505 is 1 Unlimited.