| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3 pcs
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3 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MJ802G is a high-power NPN silicon transistor manufactured by On Semiconductor. This device is suitable for use as an output stage in complementary audio amplifiers, capable of handling up to 100 Watts of music power per channel. It features a maximum collector current of 30 A and a collector-emitter voltage of 90 V.
The transistor is housed in a TO-204AA (TO-3) package, designed for through-hole mounting. It offers a high DC current gain (hFE) ranging from 25 to 100 at 7.5 A and has an excellent safe operating area. The operating junction temperature range is from -65°C to +200°C, with a total device power dissipation of 200 W at 25°C.
This transistor is a complement to the PNP MJ4502. The Pb-Free package is available. The device has a frequency rating of 2 MHz.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCER) for the MJ802G is 100 Vdc.
The MJ802G can handle a maximum continuous collector current (IC) of 30 Adc.
The total device power dissipation (PD) for the MJ802G is 200 W at 25°C.
The operating and storage junction temperature range for the MJ802G is -65°C to +200°C.
The MJ802G is supplied in a TO-204AA, TO-3 package.
The DC current gain (hFE) is a minimum of 25 at 7.5A collector current.