| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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41 pcs
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41 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel |
The MJ802 is a silicon Epitaxial-Base power transistor manufactured by On Semiconductor. It is housed in a standard TO-3 metal case and is suitable for general-purpose power amplifier and switching applications.
Key electrical specifications include a maximum collector-base voltage (Vcb) of 100V, a maximum collector current (Ic max) of 30A, and a transition frequency (ft) of 2MHz. The transistor offers a high DC current gain (hFE) ranging from 25 to 100 at 7.5A. It can operate at a maximum junction temperature of 200°C.
This transistor is designed for robust performance in demanding applications. Its TO-3 package is well-suited for power dissipation requirements, with a specified power dissipation of 200W and a collector-emitter voltage (Vce max) of 90V.
The MJ802 is an NPN type transistor, making it a versatile component for various electronic designs requiring amplification or switching capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.45 | $0.45 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current for the MJ802 is 30 A.
The maximum collector-base voltage for the MJ802 is 100 V.
The maximum operating junction temperature for the MJ802 is 200 °C.
The MJ802 transistor is supplied in a TO-3 package.
The MJ802 is an NPN polarity transistor.