| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3 pcs
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3 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Supplier Device Package | |
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The MJ802 is a silicon Epitaxial-Base power transistor manufactured by STMicroelectronics. It is housed in a TO-3 metal case and is intended for general-purpose power amplifiers and switching applications. This NPN transistor offers a maximum collector current of 30A and a maximum collector-base voltage of 100V, with a collector-emitter voltage rating of 90V. It has a power dissipation capability of 200W and a transition frequency of 2MHz. The DC current gain (hFE) is a minimum of 25 at 7.5A, with a typical range of 25-100 at 7.5A. The transistor is designed for chassis mount installation and operates at junction temperatures up to 200°C.
Key electrical characteristics include a Vce saturation of 800mV maximum at 750mA/7.5A. The MJ802 is suitable for applications requiring robust power handling and amplification. Its TO-3 package is well-suited for thermal management in power circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current for the MJ802 transistor is 30A.
The collector-emitter voltage rating of the MJ802 is 90V.
The power dissipation of the MJ802 transistor is 200W.
The maximum operating junction temperature for the MJ802 is 200°C.
The MJ802 transistor is supplied in a TO-3 package.