| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,362 pcs
|
3362 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MJ802 is a silicon Epitaxial-Base NPN power transistor manufactured by NTE Electronics. It is housed in a TO-3 metal case, also known as TO-204AA. This transistor is intended for general-purpose power amplifier and switching applications.
Key electrical specifications include a maximum collector-emitter voltage of 90V and a maximum collector current of 30A. It offers a power dissipation of 200W and a transition frequency of 2MHz. The DC current gain (hFE) is a minimum of 25 at 7.5A collector current and 2V Vce. The collector-emitter saturation voltage is a maximum of 800mV at 750mA base current and 7.5A collector current.
The MJ802 is mounted via through-hole method. Its TO-3 package is suitable for applications requiring robust thermal performance and high power handling capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 90V.
The maximum continuous collector current is 30A.
The power dissipation is 200W.
The package type is TO-204AA, TO-3.
The minimum DC current gain (hFE) is 25 at 7.5A and 2V.
The transition frequency is 2MHz.