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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,500 pcs
|
5500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
14 pcs
|
14 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base Current | |
| Base-Emitter Voltage | |
| Collector Current | |
| Collector Cutoff Current (Maximum @ VCE = 100 V, T c = 150 oC, R BE = 1 K Ω) | |
| Collector Cutoff Current (Maximum @ VCE = 50 V, I B = 0) | |
| Collector Cutoff Current (Typical @ VCE = 100 V, R BE = 1 K Ω) | |
| Collector Emitter Saturation Voltage (Maximum @ IC = 16 A, IB = 80 mA) | |
| Collector-Base Voltage | |
| Collector-Emitter Breakdown Voltage | |
| Collector-Emitter Saturation Voltage (Maximum @ IC = 10 A, IB = 40 mA) | |
| Collector-Emitter Voltage (Maximum @ I B = 0) | |
| Current | |
| DC Current Gain (Typical @ IC = 10 A, V CE = 3 V) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter Cut-off Current | |
| Emitter-Base Voltage | |
| Max Operating Junction Temperature | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Thermal Resistance Junction-Case | |
| Total Dissipation | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The MJ4035 from STMicroelectronics is a silicon epitaxial-base NPN power transistor in a monolithic Darlington configuration, housed in a TO-3 metal case. It is designed for general purpose switching and amplifier applications.
Key electrical specifications include a collector-emitter voltage of 100V and a continuous collector current of 16A. The transistor offers a high DC current gain (hFE) of 1000 at 10A and 3V. Its maximum power dissipation is rated at 150W at 25°C case temperature.
This device is suitable for applications requiring high current gain and power handling capabilities. The integrated antiparallel collector-emitter diode is beneficial in certain switching applications.
The MJ4035 is supplied in a TO-3 (TO-204AA) package, designed for chassis mounting, which facilitates heat dissipation. The maximum operating junction temperature is 200°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the MJ4035 is 100V.
The MJ4035 can handle a continuous collector current of up to 16A.
The maximum power dissipation (Ptot) for the MJ4035 is 150W at 25°C case temperature.
The MJ4035 is supplied in a TO-3 (TO-204AA) package.
The typical DC current gain (hFE) for the MJ4035 is 1000 at 10A collector current and 3V collector-emitter voltage.
The maximum operating junction temperature (TJ) for the MJ4035 is 200°C.