| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4 pcs
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4 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MJ4032 is a PNP silicon epitaxial-base power transistor in a monolithic Darlington configuration, housed in a TO-3 metal case. It is intended for general purpose switching and amplifier applications.
Key electrical specifications include a Collector-Emitter Voltage (VCEO) of 100V and a maximum Collector Current (IC) of 16A. The device offers a high DC Current Gain (hFE) of 1000 at 10A and 3V. Total power dissipation (Ptot) is rated at 150W at 25°C case temperature.
Thermal characteristics include a maximum operating junction temperature of 200°C and a thermal resistance junction-to-case of 1.17°C/W. The transistor is suitable for applications requiring high current gain and power handling capabilities.
This component is packaged in a TO-3 metal case, suitable for through-hole mounting. Its complementary NPN type is the MJ4035.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.93 | $1.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Collector-Emitter Voltage (VCEO) for the MJ4032 is 100V.
The MJ4032 can handle a maximum Collector Current (IC) of 16A.
The total power dissipation (Ptot) for the MJ4032 is 150W at a case temperature of 25°C.
The maximum operating junction temperature (Tj) for the MJ4032 is 200°C.
The DC Current Gain (hFE) for the MJ4032 is a minimum of 1000 when tested at 10A collector current and 3V collector-emitter voltage.
The MJ4032 is supplied in a TO-3 metal case.
The RoHS status of the MJ4032 is RoHS3 Compliant.