Ready to onboard?
Are you ready to join DistyParts and
grow your business?
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
195 pcs
|
195 pcs | On Request | 1 | On Request | On Request | 03+ | On Request | On Request | |
|
60 pcs
|
60 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
31 pcs
|
31 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base Current | |
| Base-Emitter Voltage | |
| Collector-Base Voltage | |
| Collector-Emitter Breakdown Voltage | |
| Current | |
| Current Collector Continuous (Maximum) | |
| Current Collector Cutoff (Maximum @ IB = 0, VCE = 50 V) | |
| Current Collector Cutoff (Maximum @ R BE = 1 K Ω, VCE = 100 V, Tc = 150 oC) | |
| Current Collector Cutoff (Typical @ R BE = 1 K Ω, VCE = 100 V) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter Cut-off Current | |
| Emitter-Base Voltage | |
| Gain DC Current (Typical @ IC = 10 A, V CE = 3 V) | |
| Max Operating Junction Temperature | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Thermal Resistance Junction-Case | |
| Total Dissipation | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| Voltage Collector Emitter (Maximum @ I B = 0) | |
| Voltage Collector Emitter Saturation (Maximum @ IC = 10 A, IB = 40 mA) | |
| Voltage Collector Emitter Saturation (Maximum @ IC = 16 A, IB = 80 mA) |
The MJ4032 from STMicroelectronics is a silicon epitaxial-base NPN power transistor in a monolithic Darlington configuration, housed in a TO-3 metal case. This device is intended for general purpose switching and amplifier applications.
Key electrical specifications include a collector-emitter voltage of 100V and a continuous collector current of 16A. The transistor offers a high DC current gain (hFE) of 1000 at 10A and 3V. Its maximum power dissipation is rated at 150W at 25°C case temperature. The operating junction temperature can reach up to 200°C.
This component is supplied in a TO-3 (TO-204AA) package, suitable for chassis mounting. The complementary PNP type is the MJ4035.
Absolute maximum ratings include a collector-base voltage of 100V and an emitter-base voltage of 5V. The thermal resistance from junction to case is a maximum of 1.17°C/W.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the MJ4032 is 100V.
The MJ4032 can handle a continuous collector current of up to 16A.
The maximum total power dissipation for the MJ4032 is 150W at a case temperature of 25°C.
The maximum operating junction temperature (TJ) for the MJ4032 is 200°C.
The MJ4032 is supplied in a TO-3 (TO-204AA) package.
The DC current gain (hFE) of the MJ4032 is a minimum of 1000 at 10A collector current and 3V collector-emitter voltage.