MJ2955G The On Semiconductor MJ2955G is a PNP bipolar junction transistor designed for general-purpose switching and amplifier applications. It features a 60V collector-emitter voltage and 15A continuous collector current.
Mfr Part #:

MJ2955G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor MJ2955G is a PNP bipolar junction transistor designed for general-purpose switching and amplifier applications. It features a 60V collector-emitter voltage and 15A continuous collector current.
Total Stock: 1 pcs
$ Price Range: $0.99

MJ2955G Available from 1 distributor

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MJ2955G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector Cutoff Current
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Power Dissipation (Maximum @ Derate above 25 °C)
Standard Package Qty
Supplier Device Package
Thermal Resistance - Junction to Case
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
Voltage Sustaining (Minimum @ IC = 200 mAdc, IB = 0)
Voltage Sustaining (Minimum @ IC = 200 mAdc, RBE = 100 Ω)
voltage (Maximum @ VCB)
voltage (Maximum @ VCER)
voltage (Maximum @ VEB)

MJ2955G Description

Short technical summary and product information.

The On Semiconductor MJ2955G is a complementary PNP silicon power transistor designed for general-purpose switching and amplifier applications. It offers a collector-emitter voltage of 60V and a continuous collector current of 15A.

 

Key electrical characteristics include a DC current gain (hFE) ranging from 20 to 70 at 4A, and a maximum collector-emitter saturation voltage (VCE(sat)) of 1.1V at 4A. The transistor has a maximum power dissipation of 115W at 25°C case temperature and operates within a junction temperature range of -65°C to 200°C.

 

This device is housed in a TO-204AA (TO-3) package, suitable for through-hole mounting. The MJ2955G is part of a series of complementary silicon power transistors, with the 2N3055 (NPN) being its counterpart.

 

It is suitable for various applications requiring robust power handling capabilities. The Pb-Free package is available, indicated by the 'G' suffix.

MJ2955G Quick Information

Product Type: PNP Power Transistor
Canonical Name: MJ2955G PNP Power Transistor
Subcategory: Bipolar (BJT) - Single

MJ2955G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MJ2955G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MJ2955G Features

  • PNP silicon power transistor
  • 60V collector-emitter voltage rating
  • 15A continuous collector current
  • 115W maximum power dissipation
  • TO-204AA (TO-3) package

MJ2955G Applications

  • General-purpose switching applications
  • General-purpose amplifier applications
  • Power supply circuits
  • Audio amplifiers

MJ2955G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating for the MJ2955G?

The collector-emitter voltage rating (VCEO) for the MJ2955G is 60 Vdc.

What is the maximum continuous collector current for the MJ2955G?

The maximum continuous collector current (IC) for the MJ2955G is 15 Adc.

What is the power dissipation of the MJ2955G at 25°C?

The total power dissipation (PD) for the MJ2955G at a case temperature of 25°C is 115 W.

What is the operating temperature range for the MJ2955G?

The operating and storage junction temperature range for the MJ2955G is -65°C to 200°C.

What is the package type for the MJ2955G?

The MJ2955G is supplied in a TO-204AA, also known as TO-3, package.

What is the DC current gain (hFE) of the MJ2955G?

The DC current gain (hFE) of the MJ2955G is between 20 and 70 at an IC of 4 Adc.

What is the collector-emitter saturation voltage (Vce Sat) for the MJ2955G?

The collector-emitter saturation voltage (Vce Sat) for the MJ2955G is a maximum of 1.1 Vdc at an IC of 4 Adc.

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