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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,333 pcs
|
2333 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2 pcs
|
2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Operating Temperature | |
| Power | |
| Supplier Device Package | |
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| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The STMicroelectronics MJ2501 is a PNP Darlington bipolar junction transistor (BJT) designed for power applications. It offers a maximum collector-emitter voltage of 80V and can handle a continuous collector current of up to 10A. With a power dissipation rating of 150W, this transistor is suitable for demanding tasks.
This device features a high DC current gain (hFE) of 1000 at 5A and 3V, and a Vce saturation of 4V maximum at 50mA base current and 10A collector current. The operating temperature can reach up to 200°C (TJ).
The MJ2501 is housed in a TO-204AA, TO-3 package, designed for chassis mounting, which facilitates heat dissipation. Its PNP Darlington configuration makes it ideal for applications requiring high current gain and switching capabilities.
Environmental compliance includes RoHS3 compliance, Moisture Sensitivity Level 1, and REACH unaffected status, though these are unverified from the database.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 80V.
The continuous collector current rating is 10A.
The power dissipation is 150W.
The DC current gain (hFE) is a minimum of 1000 at 5A collector current and 3V collector-emitter voltage.
The operating temperature can reach up to 200°C (TJ).
The MJ2501 is supplied in a TO-204AA, TO-3 package.