| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4 pcs
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4 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MJ2500 from Texas Instruments is a PNP silicon Darlington power transistor. It is designed for high-reliability applications and is available screened per MIL-PRF-19500, JANTX level. This transistor offers a collector-emitter voltage (VCEO) of 60V and a continuous collector current (IC) of 10A.
Key electrical characteristics include a DC current gain (hFE) of 1000 at 5.0A and VCE of 3V. The collector-emitter saturation voltage (VCE(sat)) is a maximum of 2V at 5.0A and 20mA base current, and 4V at 10A and 50mA base current. The base-emitter voltage (VBE(ON)) is a maximum of 3V at 5.0A and 3.0V VCE.
With a total device dissipation (PD) of 150W at 25°C case temperature, it can be derated at 0.857W/°C. The operating and storage junction temperature range is -55°C to +200°C. The thermal resistance from junction to case (RθJC) is 1.17°C/W.
The MJ2500 comes in a TO-3 package, suitable for through-hole mounting. It is available in standard, non-RoHS (Sn/Pb plating), and RoHS compliant versions by adding the '-PBF' suffix.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.93 | $1.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous collector current (IC) for the MJ2500 is 10 Amps.
The collector-emitter breakdown voltage (VCEO) for the MJ2500 is 60 Volts.
The operating and storage junction temperature range for the MJ2500 is -55°C to +200°C.
The MJ2500 transistor is supplied in a TO-3 package.