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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,900 pcs
|
2900 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Current (Maximum) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Junction to Case Thermal Resistance | |
| Leakage Current (Maximum @ VCE = 200 Vdc, IB = 0) | |
| Leakage Current (Maximum @ VCE = 250 Vdc, VBE(off) = 1.5 Vdc) | |
| Leakage Current (Maximum @ VCE = 5 Vdc, IC = 0) | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Second Breakdown Current (Minimum @ VCE = 50 Vdc, t = 1 s (non-repetitive) | |
| Second Breakdown Current (Minimum @ VCE = 80 Vdc, t = 1 s (non-repetitive) | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| voltage (Minimum @ IC = 100 mAdc, IB = 0) |
The ON Semiconductor MJ21196G is a silicon NPN power transistor utilizing Perforated Emitter technology. It is specifically designed for high power audio output, disk head positioners, and linear applications. This transistor features a maximum collector-emitter voltage of 250 Vdc and a continuous collector current of 16 Adc, with a peak current capability of 30 Adc.
With a total device dissipation of 250 W at 25°C, the MJ21196G is suitable for demanding power applications. It boasts a high DC current gain (hFE) of 25 at 8A and 5V, and excellent gain linearity. The operating and storage junction temperature range is from -65°C to +200°C.
The transistor is housed in a TO-204AA, TO-3 package, designed for through-hole mounting. Its thermal resistance from junction to case is a maximum of 0.7°C/W, facilitating efficient heat dissipation. The device is Pb-Free and RoHS Compliant.
Key electrical characteristics include a collector-emitter sustaining voltage of 250 Vdc, and a saturation voltage (Vce) of 4V maximum at 3.2A base current and 16A collector current. The frequency response extends to 4 MHz.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the MJ21196G is 250 Vdc.
The MJ21196G has a continuous collector current (IC) rating of 16 Adc.
The total device dissipation (PD) for the MJ21196G is 250 W at 25°C.
The operating and storage junction temperature range for the MJ21196G is -65°C to +200°C.
The MJ21196G is supplied in a TO-204AA, TO-3 package.
The MJ21196G is RoHS3 Compliant.