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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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6,358 pcs
|
6358 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The MJ16018 is a single NPN bipolar junction transistor (BJT) manufactured by Solid State Devices Inc. This component is designed for power applications, featuring a high collector-emitter voltage rating of 750V and a maximum continuous current of 10A.
Key electrical specifications include a maximum power dissipation of 175W and a DC current gain (hFE) of 4 minimum at 5A and 5V. The saturation voltage (Vce(sat)) is a maximum of 5V at 5A and 10A.
This transistor is housed in a TO-3 (TO-204AA) package, suitable for through-hole mounting. The operating temperature range extends from -65°C to 200°C, with the existing DB listing a specific operating temperature of 150°C.
Environmental compliance information indicates RoHS3 compliance, MSL 1, and REACH unaffected status, though these are noted as unverified.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 750V.
The transistor can handle a maximum continuous current of 10A.
The maximum power dissipation is 175W.
The operating temperature range is -65°C to 200°C.
The MJ16018 is supplied in a TO-3 package.
The minimum DC current gain (hFE) is 4 at 5A and 5V.
The maximum saturation voltage (Vce(sat)) is 5V at 5A and 10A.