SL3S1206FUD2/HAA-VB2
NXP Semiconductors
The NXP Semiconductors SL3S1206FUD2/HAA-VB2 is a Chassis Mount Resistor. It is RoHS3 Compliant and REACH Unaffected.
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100 pcs
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100 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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50 pcs
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50 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MJ15022 is a PowerBase silicon power transistor manufactured by ON Semiconductor. It is designed for demanding linear applications such as high power audio systems and disk head positioners.
Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 200V and a continuous collector current (IC) of 16A. The transistor boasts a high DC current gain (hFE) of 15 minimum at 8A and a high Safe Operating Area (SOA) tested at 2A @ 80V. It can dissipate up to 250 Watts at a case temperature of 25°C, with a derating of 1.43 W/°C above that temperature.
The operating and storage junction temperature range is from -65°C to +200°C. The thermal resistance from junction to case (RθJC) is a maximum of 0.70°C/W, indicating efficient heat dissipation.
This transistor is housed in a TO-204AA (TO-3) package, suitable for through-hole mounting. Its robust design makes it a reliable choice for high-power audio amplification and other linear circuits requiring significant current and voltage handling capabilities.
| Qty | Low | High |
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| 1+ | $0.42 | $0.42 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the MJ15022 is 200 Vdc.
The MJ15022 has a continuous collector current (IC) rating of 16 Adc.
The maximum power dissipation (PD) for the MJ15022 at a case temperature of 25°C is 250 Watts.
The operating junction temperature range for the MJ15022 is -65°C to +200°C.
The thermal resistance from junction to case (RθJC) for the MJ15022 is a maximum of 0.70 °C/W.
The MJ15022 is supplied in a TO-204AA (TO-3) package.
